Absorption and emission in quaterthienyl thin films

doi:10.1002/adma.200304770

CORC > 化学研究所 > 中国科学院化学研究所

	Absorption and emission in quaterthienyl thin films
	Sun, H ; Zhao, Z ; Spano, FC ; Beljonne, D ; Cornil, J ; Shuai, Z ; Bredas, JL
刊名	ADVANCED MATERIALS
	2003-05-16
卷号	15 期号:10 页码:818-+
ISSN号	0935-9648
DOI	10.1002/adma.200304770
英文摘要	The salient features in the absorption and emission spectra of alphaT4 aggregates (see Figure) and films are fully accounted for using a model based on linear exciton-phonon coupling and structural defects. In particular, the Davydov splitting is calculated to be of the order of 1 eV, and the unusually small 0-0 emission intensity is attributed to the high sensitivity of the 0-0 intensity to basal plane structural defects.
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000183246100015
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/79739]
专题	中国科学院化学研究所
通讯作者	Spano, FC
作者单位	1.Temple Univ, Dept Chem, Philadelphia, PA 19122 USA 2.Univ Mons, B-7000 Mons, Belgium 3.Univ Arizona, Dept Chem, Tucson, AZ 85721 USA 4.Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Sun, H,Zhao, Z,Spano, FC,et al. Absorption and emission in quaterthienyl thin films[J]. ADVANCED MATERIALS,2003,15(10):818-+.
APA	Sun, H.,Zhao, Z.,Spano, FC.,Beljonne, D.,Cornil, J.,...&Bredas, JL.(2003).Absorption and emission in quaterthienyl thin films.ADVANCED MATERIALS,15(10),818-+.
MLA	Sun, H,et al."Absorption and emission in quaterthienyl thin films".ADVANCED MATERIALS 15.10(2003):818-+.