Nanolithographic modification of diamond

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	Nanolithographic modification of diamond
	Kondo, T ; Yanagisawa, M ; Jiang, L ; Tryk, DA ; Fujishima, A
刊名	DIAMOND AND RELATED MATERIALS
	2002-10-01
卷号	11 期号:10 页码:1788-1796
关键词	Homoepitaxy Diamond Films Atomic Force Microscopy Electrical Properties
ISSN号	0925-9635
英文摘要	Electrical bias-induced nanolithographic modification of the as-deposited surface of boron-doped homoepitaxial diamond films was demonstrated by use of atomic force microscopy in the surface modification (SM) mode and measured in the current mapping (CM) mode. The SM mode involves a higher bias voltage, greater than +2 V, sample vs. gold-coated cantilever tip, than that used for the CM mode. In this way, very small features, e.g. lines 20-30 nm in width, were produced. The main characteristic of these features was extremely low-apparent conductivity. This phenomenon is due principally to a conversion of the hydrogen-terminated, as-deposited surface to an oxygen-terminated surface, thereby increasing the Schottky barrier height significantly. The SM mechanism most likely involves a tip-induced electrochemical oxidation process, i.e. anodization, with water from the humid atmosphere acting as the electrolyte, as in the similar, well-known process on silicon surfaces. (C) 2002 Elsevier Science B.V. All rights reserved.
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000178402200009
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/78275]
专题	中国科学院化学研究所
通讯作者	Fujishima, A
作者单位	1.Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan 2.Chinese Acad Sci, Inst Chem, Mol Sci Res Ctr, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Kondo, T,Yanagisawa, M,Jiang, L,et al. Nanolithographic modification of diamond[J]. DIAMOND AND RELATED MATERIALS,2002,11(10):1788-1796.
APA	Kondo, T,Yanagisawa, M,Jiang, L,Tryk, DA,&Fujishima, A.(2002).Nanolithographic modification of diamond.DIAMOND AND RELATED MATERIALS,11(10),1788-1796.
MLA	Kondo, T,et al."Nanolithographic modification of diamond".DIAMOND AND RELATED MATERIALS 11.10(2002):1788-1796.