Formation, photodissociation and structures of Si, Ge, Sn, Pb/P binary atomic cluster ions

doi:10.3866/PKU.WHXB19991005

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	Formation, photodissociation and structures of Si, Ge, Sn, Pb/P binary atomic cluster ions
	Liu, JB; Han, CY; Zeng, R; Gao, Z; Zhu, QH
刊名	ACTA PHYSICO-CHIMICA SINICA
	1999-10-01
卷号	15 期号:10 页码:883-889
关键词	Binary Atomic Clusters Laser Ablation Laser Photodissociation Tof Mass Spectrometer Wade's Rule
ISSN号	1000-6818
DOI	10.3866/PKU.WHXB19991005
英文摘要	The formation and photodissociation of group HV (Si, Ge, Sn, Pb)/P binary cluster ions, produced by laser ablation, were studied with a tandem TOF mass spectrometer, The stability of these cluster ions is influenced by their electronic and geometric structures, and the geometric stability becomes more important for heavier group IV /P cluster ions. Two types of binary clusters marked with the magic numbers were observed: one type of magic clusters may be explained by the Wade's rule, in which P atom either attaches as electron-donating ligand to the close-skeleton of group IV atoms, or joins the close-skeleton directly; another type of magic clusters are isoelectronic with magic species of neutral group IV clusters or P clusters. The possible structures of magic cluster ions were studied by ab initio calculation and the Wade's rule.
语种	英语
出版者	PEKING UNIV PRESS
WOS记录号	WOS:000083087800005
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/74817]
专题	中国科学院化学研究所
通讯作者	Gao, Z
作者单位	Inst Chem, State Key Lab Mol React Dynam, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Liu, JB,Han, CY,Zeng, R,et al. Formation, photodissociation and structures of Si, Ge, Sn, Pb/P binary atomic cluster ions[J]. ACTA PHYSICO-CHIMICA SINICA,1999,15(10):883-889.
APA	Liu, JB,Han, CY,Zeng, R,Gao, Z,&Zhu, QH.(1999).Formation, photodissociation and structures of Si, Ge, Sn, Pb/P binary atomic cluster ions.ACTA PHYSICO-CHIMICA SINICA,15(10),883-889.
MLA	Liu, JB,et al."Formation, photodissociation and structures of Si, Ge, Sn, Pb/P binary atomic cluster ions".ACTA PHYSICO-CHIMICA SINICA 15.10(1999):883-889.