Fabrication and characterization of molecular scale field-effect transistors

doi:10.1039/b922958b

CORC > 化学研究所 > 中国科学院化学研究所

	Fabrication and characterization of molecular scale field-effect transistors
	Cao, Lingchao 1,2; Chen, Shiyan 1; Wei, Dacheng 1; Liu, Yunqi 1; Fu, Lei 1; Yu, Gui 1; Liu, Hongming 3; Liu, Xinyu 3; Wu, Dexing 3
刊名	JOURNAL OF MATERIALS CHEMISTRY
	2010
卷号	20 期号:12 页码:2305-2309
ISSN号	0959-9428
DOI	10.1039/b922958b
英文摘要	Molecular electronics are considered one of the most promising ways to meet the challenge of micro-electronics facing its scaling down pathway. Molecular devices, especially molecular scale field-effect transistors (MSFET), are key building blocks for molecular electronics. Three major hurdles to device fabrication are yet to be overcome: electrode pairs must be fabricated with a controllable gap size commensurate with the functional molecule size of interest; the molecules of interest must be arranged between the electrodes with precise location and orientation control; and stable, conducting contacts must be made between the molecules and the electrodes. We have combined "top-down'' and "bottom-up'' approaches to solve these problems. Using photolithography and molecular lithography with self-assembled mono/multiple molecule layer(s) as a resist, we fabricated electrode structures with a controllable molecular-scale gap between source and drain electrodes and a third terminal of a buried gate. For our device, we synthesized a thiolated phthalocyanine derivative molecule, {di-[1-(S-acetylthio)-4-ethynylphenyl]-di-(tert-butyl)phthalocyanato}copper(II), with acetylthio groups on both ends, conjugated with ethynylphenyl groups. The synthesized end-thiolated molecules were assembled between the tailored molecular gap of the as-fabricated FET electrode structures in solution via Au-S bonding, forming stable contacts between the electrodes and the molecules, and a 3 terminal MSFET device was formed. Electrical measurements show that the device has characteristics of a typical FET device. The field-effect mobility of the as-fabricated MS-FET is 0.16 cm(2) V(-1) s(-1).
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000275380000005
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/70931]
专题	中国科学院化学研究所
通讯作者	Liu, Yunqi
作者单位	1.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China 3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
推荐引用方式 GB/T 7714	Cao, Lingchao,Chen, Shiyan,Wei, Dacheng,et al. Fabrication and characterization of molecular scale field-effect transistors[J]. JOURNAL OF MATERIALS CHEMISTRY,2010,20(12):2305-2309.
APA	Cao, Lingchao.,Chen, Shiyan.,Wei, Dacheng.,Liu, Yunqi.,Fu, Lei.,...&Wu, Dexing.(2010).Fabrication and characterization of molecular scale field-effect transistors.JOURNAL OF MATERIALS CHEMISTRY,20(12),2305-2309.
MLA	Cao, Lingchao,et al."Fabrication and characterization of molecular scale field-effect transistors".JOURNAL OF MATERIALS CHEMISTRY 20.12(2010):2305-2309.