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Selective Crystallization of Organic Semiconductors for High Performance Organic Field-Effect Transistors
Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wu, Weiping; Zhu, Daoben
刊名CHEMISTRY OF MATERIALS
2009-10-27
卷号21期号:20页码:4873-4879
ISSN号0897-4756
DOI10.1021/cm902594y
英文摘要The patterning of an organic layer, a big challenge for organic field-effect transistors (OFETs), have recently received considerable attention. By using copper tetracyanoquinodimethane (Cu-TCNQ) modified copper electrodes with nanostructure, selective polycrystalline growth of organic semiconductors is achieved. For different organic semiconductors, varied ways for crystal growth are observed. The OFETs based on selectively deposited tetracyanoquinodimethane (TCNQ), rubrene, and copper phthalocyanine crystals are fabricated and exhibit good device performance. Rubrene devices exhibit maximum field-effect mobility up to 4.6 cm(2)/(V.s) which is comparable to that of corresponding single crystal device. In addition, an organic inverter made of patterned rubrene and TCNQ exhibits a gain of 23. These results offer a general approach to the fabrication of high performance OFETs and organic circuits.
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000270807800019
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/66355]  
专题中国科学院化学研究所
通讯作者Liu, Yunqi
作者单位Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Di, Chong-an,Yu, Gui,Liu, Yunqi,et al. Selective Crystallization of Organic Semiconductors for High Performance Organic Field-Effect Transistors[J]. CHEMISTRY OF MATERIALS,2009,21(20):4873-4879.
APA Di, Chong-an.,Yu, Gui.,Liu, Yunqi.,Guo, Yunlong.,Sun, Xiangnan.,...&Zhu, Daoben.(2009).Selective Crystallization of Organic Semiconductors for High Performance Organic Field-Effect Transistors.CHEMISTRY OF MATERIALS,21(20),4873-4879.
MLA Di, Chong-an,et al."Selective Crystallization of Organic Semiconductors for High Performance Organic Field-Effect Transistors".CHEMISTRY OF MATERIALS 21.20(2009):4873-4879.
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