Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator

doi:10.1016/j.orgel.2009.05.001

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	Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator
	Li, Chunhong; Pan, Feng; Wang, Xiujin; Wang, Lijuan; Wang, He; Wang, Haibo; Yan, Donghang
刊名	ORGANIC ELECTRONICS
	2009-08-01
卷号	10 期号:5 页码:948-953
关键词	Organic Thin-film Transistors Hysteresis Ta2o5 Insulator Work Function
ISSN号	1566-1199
DOI	10.1016/j.orgel.2009.05.001
英文摘要	Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode. The hysteresis characteristics were studied by the repetitive gate voltage sweep of OTFTs, and capacitance-voltage (C-V) and trap loss-voltage (G(p)/omega-V) measurements of metal-insulator-semiconductor (MIS) devices. It is proved that the hysteresis characteristics of OTFTs are relative to the electron injection from gate metal to Ta2O5 insulator. The electron barrier height between gate metal and Ta2O5 is enhanced by using Au as gate electrode, and then the electron injection from gate metal to Ta2O5 is reduced. Finally, low hysteresis OTFTs were fabricated using Au as gate electrode. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000268368400030
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/65995]
专题	中国科学院化学研究所
通讯作者	Yan, Donghang
作者单位	Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
推荐引用方式 GB/T 7714	Li, Chunhong,Pan, Feng,Wang, Xiujin,et al. Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator[J]. ORGANIC ELECTRONICS,2009,10(5):948-953.
APA	Li, Chunhong.,Pan, Feng.,Wang, Xiujin.,Wang, Lijuan.,Wang, He.,...&Yan, Donghang.(2009).Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator.ORGANIC ELECTRONICS,10(5),948-953.
MLA	Li, Chunhong,et al."Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator".ORGANIC ELECTRONICS 10.5(2009):948-953.