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High-performance n-type organic thin-film phototransistors based on a core-expanded naphthalene diimide
Qi, Zhe1,2; Liao, Xiaxia1,3,4; Zheng, Jincheng3,4; Di, Chong-an1; Gao, Xike5; Wang, Jizheng1
刊名APPLIED PHYSICS LETTERS
2013-07-29
卷号103期号:5
ISSN号0003-6951
DOI10.1063/1.4817267
英文摘要High-performance n-type organic phototransistors (OPTs) based on a core-expanded naphthalene diimide are reported in this letter. The photo responsivity is as high as 27000 AW(-1) and photocurrent/dark-current ratio reaches 1.1 x 10(7) under a white light illumination with a power density of 107 mu Wcm(-2). In such OPTs, persistent photoconductivity (PPC) is observed, which can be instantly eliminated by a positive gate voltage pulse. This is explained in terms of trapped photo holes in the channel. In the light on-off switching test, such PPC also leads to well-reproducible memory effect in the OPTs. (C) 2013 AIP Publishing LLC.
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000322723000096
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/54797]  
专题中国科学院化学研究所
通讯作者Qi, Zhe
作者单位1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
4.Xiamen Univ, Inst Theoret Phys & Astrophys, Xiamen 361005, Peoples R China
5.Chinese Acad Sci, Shanghai Inst Organ Chem, Mat Sci Lab, Shanghai 200032, Peoples R China
推荐引用方式
GB/T 7714
Qi, Zhe,Liao, Xiaxia,Zheng, Jincheng,et al. High-performance n-type organic thin-film phototransistors based on a core-expanded naphthalene diimide[J]. APPLIED PHYSICS LETTERS,2013,103(5).
APA Qi, Zhe,Liao, Xiaxia,Zheng, Jincheng,Di, Chong-an,Gao, Xike,&Wang, Jizheng.(2013).High-performance n-type organic thin-film phototransistors based on a core-expanded naphthalene diimide.APPLIED PHYSICS LETTERS,103(5).
MLA Qi, Zhe,et al."High-performance n-type organic thin-film phototransistors based on a core-expanded naphthalene diimide".APPLIED PHYSICS LETTERS 103.5(2013).
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