Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates

doi:10.1002/adma.201304872

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	Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates
	Chen, Jianyi 1; Guo, Yunlong 1; Jiang, Lili 2; Xu, Zhiping 3,4; Huang, Liping 1; Xue, Yunzhou 1; Geng, Dechao 1; Wu, Bin 1; Hu, Wenping 1; Yu, Gui 1
刊名	ADVANCED MATERIALS
	2014-03-01
卷号	26 期号:9 页码:1348-1353
ISSN号	0935-9648
DOI	10.1002/adma.201304872
英文摘要	By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 mu m. The carrier mobility can reach about 5650 cm(2) V-1 s(-1), which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice.
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000335669400003
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/53167]
专题	中国科学院化学研究所
通讯作者	Liu, Yunqi
作者单位	1.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 3.Tsinghua Univ, Dept Engn Mech, Beijing 100084, Peoples R China 4.Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China
推荐引用方式 GB/T 7714	Chen, Jianyi,Guo, Yunlong,Jiang, Lili,et al. Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates[J]. ADVANCED MATERIALS,2014,26(9):1348-1353.
APA	Chen, Jianyi.,Guo, Yunlong.,Jiang, Lili.,Xu, Zhiping.,Huang, Liping.,...&Liu, Yunqi.(2014).Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates.ADVANCED MATERIALS,26(9),1348-1353.
MLA	Chen, Jianyi,et al."Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates".ADVANCED MATERIALS 26.9(2014):1348-1353.