Fluorinated low band gap copolymer based on dithienosilole-benzothiadiazole for high-performance photovoltaic device

doi:10.1039/c4py00758a

CORC > 化学研究所 > 中国科学院化学研究所

	Fluorinated low band gap copolymer based on dithienosilole-benzothiadiazole for high-performance photovoltaic device
	Lv, Hongying 1,2,3; Zhao, Xiaoli 1,2; Li, Zidong 1,2,3; Yang, Dalei 1,2,3; Wang, Zhongliang 1,4; Yang, Xiaoniu 1,2
刊名	POLYMER CHEMISTRY
	2014
卷号	5 期号:21 页码:6279-6286
ISSN号	1759-9954
DOI	10.1039/c4py00758a
英文摘要	A new fluorinated low band gap copolymer, poly[(4,4'-bis(2-ethylhexyl)dithieno[3,2-b:2',3'-d]silole)-2,6-diyl-alt-4,7-(5-fluoro-2,1,3-benzothiadiazole)] (PDTSBT-F), was designed and synthesized. The introduction of fluorine atom to a classical low band gap copolymer (PDTSBT) has a little influence on the polymer absorption spectrum and band gap, which was 1.48 eV for PDTSBT-F. However, the HOMO level was lowered to -5.17 eV for PDTSBT-F, the film crystallinity was improved, and PDTSBT-F showed higher charge carrier mobility than its non-fluorinated analogue (PDTSBT). For the PDTSBT-F/PC71BM device, a J(sc) of 15.96 mA cm(-2), a V-oc of 0.70 V, and a FF of 0.60 were attained, resulting in a PCE of 6.70%. To the best of our knowledge, this is the highest value to date in devices based on copolymers with C-, Si- and Ge-bridged dithiophene as the electron-rich unit and benzothiadiazole derivatives as electron-deficient unit. A high PCE in combination with a wide absorption spectrum in the visible range could induce PDTSBT-F to be a potentially promising low band gap polymer for polymer solar cells.
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000342761200016
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/52713]
专题	中国科学院化学研究所
通讯作者	Zhao, Xiaoli
作者单位	1.Chinese Acad Sci, Changchun Inst Appl Chem, Polymer Composites Engn Lab, Changchun 130022, Peoples R China 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Changchun Univ Technol, Changchun 130012, Peoples R China
推荐引用方式 GB/T 7714	Lv, Hongying,Zhao, Xiaoli,Li, Zidong,et al. Fluorinated low band gap copolymer based on dithienosilole-benzothiadiazole for high-performance photovoltaic device[J]. POLYMER CHEMISTRY,2014,5(21):6279-6286.
APA	Lv, Hongying,Zhao, Xiaoli,Li, Zidong,Yang, Dalei,Wang, Zhongliang,&Yang, Xiaoniu.(2014).Fluorinated low band gap copolymer based on dithienosilole-benzothiadiazole for high-performance photovoltaic device.POLYMER CHEMISTRY,5(21),6279-6286.
MLA	Lv, Hongying,et al."Fluorinated low band gap copolymer based on dithienosilole-benzothiadiazole for high-performance photovoltaic device".POLYMER CHEMISTRY 5.21(2014):6279-6286.