ToF-SIMS depth profiling of insulating samples, interlaced mode or non-interlaced mode?

doi:10.1002/sia.5419

CORC > 化学研究所 > 中国科学院化学研究所

	ToF-SIMS depth profiling of insulating samples, interlaced mode or non-interlaced mode?
	Wang, Zhaoying 1,2; Jin, Ke 3; Zhang, Yanwen 3,4; Wang, Fuyi 1; Zhu, Zihua 2
刊名	SURFACE AND INTERFACE ANALYSIS
	2014-11-01
卷号	46 页码:257-260
关键词	Tof-sims Dual-beam Depth Profiling Interlaced Mode Non-interlaced Mode Insulator
ISSN号	0142-2421
DOI	10.1002/sia.5419
英文摘要	Dual-beam depth profiling strategy has been widely adopted in time-of-flight secondary ion mass spectrometry depth profiling, in which two basic operation modes, interlaced mode and non-interlaced mode, are commonly used. Generally, interlaced mode is recommended for conductive or semi-conductive samples, whereas non-interlaced mode is recommended for insulating samples, where charge compensation can be an issue. Recent publications, however, show that the interlaced mode can be used effectively for glass depth profiling, despite the fact that glass is an insulator. In this study, we provide a simple guide for choosing between interlaced mode and non-interlaced mode for insulator depth profiling. Two representative cases are presented: (i) depth profiling of a leached glass sample and (ii) depth profiling of a single-crystal MgO sample. In summary, the interlaced mode should be attempted first, because (i) it may provide data with reasonable quality, (ii) it is time-saving for most cases, and (iii) it introduces low H/C/O background. If data quality is the top priority and measurement time is flexible, non-interlaced mode is recommended because interlaced mode may suffer from low signal intensity and poor mass resolution. A big challenge is tracking trace H/C/O in a highly insulating sample (e.g., MgO), because non-interlaced mode may introduce strong H/C/O background, but interlaced mode may suffer from low signal intensity. Meanwhile, a C or Au coating is found to be very effective to improve the signal intensity. Surprisingly, the best analyzing location is not on the C or Au coating but at the edge (outside) of the coating. Copyright (c) 2014 John Wiley & Sons, Ltd.
语种	英语
出版者	WILEY-BLACKWELL
WOS记录号	WOS:000345696200064
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/50863]
专题	中国科学院化学研究所
通讯作者	Zhu, Zihua
作者单位	1.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China 2.Pacific NW Natl Lab, WR Wiley Environm Mol Sci Lab, Richland, WA 99354 USA 3.Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA 4.Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
推荐引用方式 GB/T 7714	Wang, Zhaoying,Jin, Ke,Zhang, Yanwen,et al. ToF-SIMS depth profiling of insulating samples, interlaced mode or non-interlaced mode?[J]. SURFACE AND INTERFACE ANALYSIS,2014,46:257-260.
APA	Wang, Zhaoying,Jin, Ke,Zhang, Yanwen,Wang, Fuyi,&Zhu, Zihua.(2014).ToF-SIMS depth profiling of insulating samples, interlaced mode or non-interlaced mode?.SURFACE AND INTERFACE ANALYSIS,46,257-260.
MLA	Wang, Zhaoying,et al."ToF-SIMS depth profiling of insulating samples, interlaced mode or non-interlaced mode?".SURFACE AND INTERFACE ANALYSIS 46(2014):257-260.