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Lowering programmed voltage of organic memory transistors based on polymer gate electrets through heterojunction fabrication
Guo, Yunlong; Zhang, Ji; Yu, Gui; Zheng, Jian; Zhang, Lei; Zhao, Yan; Wen, Yugeng; Liu, Yunqi
刊名ORGANIC ELECTRONICS
2012-10-01
卷号13期号:10页码:1969-1974
关键词Lowering Programmed Voltage Organic Memory Transistor Polymer Gate Electrets Heterojunction
ISSN号1566-1199
DOI10.1016/j.orgel.2012.05.007
英文摘要The authors report on low operation voltage memory cells based on heterojunction ambipolar organic transistors with polymer gate electret (PGE). The introduction of the N,N'-dioctyl perylene diimide/pentacene heterojunction into the memory OFETs with PGE successfully lowered the memory cells' reading, writing and erasing programmed voltages (reading voltage of 2 V, writing and erasing programmed voltages of 10 V). Meanwhile, the memory devices showed reproducible and durable memory behavior in more than 500 cycles' testing. The built-in electric field-effect at heterojunction surface should efficiently reduce operation voltage of the memory devices. (C) 2012 Elsevier B.V. All rights reserved.
语种英语
出版者ELSEVIER SCIENCE BV
WOS记录号WOS:000309591200027
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/47189]  
专题中国科学院化学研究所
通讯作者Yu, Gui
作者单位Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Guo, Yunlong,Zhang, Ji,Yu, Gui,et al. Lowering programmed voltage of organic memory transistors based on polymer gate electrets through heterojunction fabrication[J]. ORGANIC ELECTRONICS,2012,13(10):1969-1974.
APA Guo, Yunlong.,Zhang, Ji.,Yu, Gui.,Zheng, Jian.,Zhang, Lei.,...&Liu, Yunqi.(2012).Lowering programmed voltage of organic memory transistors based on polymer gate electrets through heterojunction fabrication.ORGANIC ELECTRONICS,13(10),1969-1974.
MLA Guo, Yunlong,et al."Lowering programmed voltage of organic memory transistors based on polymer gate electrets through heterojunction fabrication".ORGANIC ELECTRONICS 13.10(2012):1969-1974.
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