During pulsed laser interaction on silicon surface, the transient electron lattices occur on plasma resonance induced from faster photons on surface in our experiment. Here, it is interesting that the electron crystals can be built on plasma surface induced by intensive faster photons on silicon, which is similar with Wigner crystal in intensive electric field or intensive magnetic field. In the two-dimensional (2D) Bravais lattices, the electron crystals of three-fold, four-fold and six-fold symmetry lattices can be observed on plasma surface by using the reflecting Talbot effect images. On these surface period lattices, the decay spectrum of faster emission on the 2D transient electron crystal was measured, which is related to the faster decay peak with lifetime of 100 ns. These new phenomena have a good application in preparing the PN junction of photo-electronic devices, where the surface electron gas on plasma surface can inject into the top layer to build N type region, and the positive ions under plasma can inject into the bottom layer for forming P type region on silicon with defects in vacuum.