Ultrathin GaGeTe p-type transistors

doi:10.1063/1.4998350

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	Ultrathin GaGeTe p-type transistors
	Wang, Weike 1; Li, Liang 2; Zhang, Zhitao 3; Yang, Jiyong 3; Tang, Dongsheng 1; Zhai, Tianyou 2
刊名	APPLIED PHYSICS LETTERS
	2017-11-13
卷号	111 期号:20 页码:3
ISSN号	0003-6951
DOI	10.1063/1.4998350
英文摘要	We exfoliated bulk GaGeTe crystals down to ultrathin flakes using the scotch tape method and fabricated field effect transistors (FETs). The GaGeTe FETs display a p-type behavior with drain current modulation on the order of 10(3), hole mobility of 0.45 cm(2) V-1 s(-1), and photoresponsivity of 3.6 A W-1 at room temperature. These findings suggest that the layered GaGeTe is a promising 2D semiconductor for fabricating devices, such as transistors and photodetectors. Published by AIP Publishing.
资助项目	National Natural Science Foundation of China[11604340] ; National Natural Science Foundation of China[11304321] ; National Natural Science Foundation of China[11574081] ; China Postdoctoral Science Foundation[2015LH0018] ; China Postdoctoral Science Foundation[2017M610474]
WOS关键词	RAMAN-SPECTRUM ; LAYER
WOS研究方向	Physics
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000415648000049
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/36079]
专题	合肥物质科学研究院_中科院强磁场科学中心
通讯作者	Tang, Dongsheng; Zhai, Tianyou
作者单位	1.Hunan Normal Univ, Coll Phys & Informat Sci, Minist Educ,Synerget Innovat Ctr Quantum Effects, Key Lab Low Dimens Quantum Structures & Quantum C, Changsha 410081, Hunan, Peoples R China 2.Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China 3.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Wang, Weike,Li, Liang,Zhang, Zhitao,et al. Ultrathin GaGeTe p-type transistors[J]. APPLIED PHYSICS LETTERS,2017,111(20):3.
APA	Wang, Weike,Li, Liang,Zhang, Zhitao,Yang, Jiyong,Tang, Dongsheng,&Zhai, Tianyou.(2017).Ultrathin GaGeTe p-type transistors.APPLIED PHYSICS LETTERS,111(20),3.
MLA	Wang, Weike,et al."Ultrathin GaGeTe p-type transistors".APPLIED PHYSICS LETTERS 111.20(2017):3.