Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

doi:10.1103/PhysRevLett.117.116101

	Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces
	Zanolli, Z.6,7,8,9; Fan, J.2; Yang, X. B.10; Tong, S. Y.2,11; Xu, H.2; Zhao, J. Z.2,3; Fan, W.4; Verstraete, M. J.1,5
刊名	PHYSICAL REVIEW LETTERS
	2016-09-06
卷号	117 期号:11
ISSN号	0031-9007
DOI	10.1103/PhysRevLett.117.116101
文献子类	Article
英文摘要	Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (10 (1) over bar0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls's description. We predict that this type of insulating state should be visible in the partially hydrogenated (10 (1) over bar0) surface of many wurtzite compounds.
WOS关键词	TOTAL-ENERGY CALCULATIONS ; CHARGE-DENSITY-WAVE ; BASIS-SET ; PHASE ; INSTABILITIES ; ALGORITHM ; ORIGIN
WOS研究方向	Physics
语种	英语
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000383247000003
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/170238]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者	Tong, S. Y.; Xu, H.
作者单位	1.Univ Liege, Dept Phys, B-4000 Liege, Belgium 2.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China 3.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China 4.RIKEN, Computat Condensed Matter Phys Lab, Wako, Saitama 3510198, Japan 5.Univ Liege, European Theoret Spect Facil, B-4000 Liege, Belgium 6.Forschungszentrum Julich, PGI 1, D-52425 Julich, Germany 7.Forschungszentrum Julich, IAS 1, D-52425 Julich, Germany 8.Rhein Westfal TH Aachen, Inst Theoret Solid State Phys, D-52056 Aachen, Germany 9.Rhein Westfal TH Aachen, ETSF, D-52056 Aachen, Germany 10.South China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Zanolli, Z.,Fan, J.,Yang, X. B.,et al. Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces[J]. PHYSICAL REVIEW LETTERS,2016,117(11).
APA	Zanolli, Z..,Fan, J..,Yang, X. B..,Tong, S. Y..,Xu, H..,...&Verstraete, M. J..(2016).Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces.PHYSICAL REVIEW LETTERS,117(11).
MLA	Zanolli, Z.,et al."Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces".PHYSICAL REVIEW LETTERS 117.11(2016).