Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions

doi:10.1021/acs.jpcb.7b06379

	Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions
	Kong, Shuang 1,3; Wu, Tianmin 2,4; Zhuang, Wei 2; Jiang, Peng 1; Bao, Xinhe 1
刊名	JOURNAL OF PHYSICAL CHEMISTRY B
	2018-01-18
卷号	122 期号:2 页码:713-720
ISSN号	1520-6106
DOI	10.1021/acs.jpcb.7b06379
文献子类	Article
英文摘要	Two-dimensional transition-metal dichalcogenide semiconductors (TMDCs) such as MoS2 are attracting increasing interest as thermoelectric materials owing to their abundance, nontoxicity, and promising performance. Recently, we have successfully developed n-type MoS2 thermoelectric material via oxygen doping. Nevertheless, an efficient thermoelectric module requires both n-type and p-type materials with similar compatibility factors. Here, we present a facile approach to obtain a p-type MoS2 thermoelectric material with a maximum figure of merit of 0.18 through the introduction of VMo2S4 as a second phase by vanadium doping. VMo2S4 nanoinclusions, confirmed by X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) measurements, not only improve the electrical conductivity by simultaneously increasing the carrier concentration and the mobility but also result in the reduction of lattice thermal conductivity by enhancing the interface phonon scattering. Our studies not only shed new light toward improving thermoelectric performance of TMDCs by a facile elemental doping strategy but also pave the way toward thermoelectric devices based on TMDCs.
WOS关键词	BISMUTH-ANTIMONY TELLURIDE ; THERMAL-CONDUCTIVITY ; MOLYBDENUM-DISULFIDE ; CARRIER MOBILITY ; MONOLAYER MOS2 ; BULK ; NANOCOMPOSITES ; CRYSTAL ; COMPOSITES ; POWER
WOS研究方向	Chemistry
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000423140600039
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/168620]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者	Zhuang, Wei; Jiang, Peng; Bao, Xinhe
作者单位	1.Chinese Acad Sci, Dalian Inst Chem Phys, CAS Ctr Excellence Nanosci, State Key Lab Catalysis, Dalian 116023, Liaoning, Peoples R China 2.Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Univ Sci & Technol China, Dept Chem Phys, Hefei 230026, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Kong, Shuang,Wu, Tianmin,Zhuang, Wei,et al. Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions[J]. JOURNAL OF PHYSICAL CHEMISTRY B,2018,122(2):713-720.
APA	Kong, Shuang,Wu, Tianmin,Zhuang, Wei,Jiang, Peng,&Bao, Xinhe.(2018).Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions.JOURNAL OF PHYSICAL CHEMISTRY B,122(2),713-720.
MLA	Kong, Shuang,et al."Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions".JOURNAL OF PHYSICAL CHEMISTRY B 122.2(2018):713-720.