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	Defects coupling impacts on mono-layer wse2 tunneling field-effect transistors
	Wu,Jixuan1,2; Ma,Xiaolei1,2; Chen,Jiezhi1; Jiang,Xiangwei2
刊名	Applied physics express
	2019-02-05
卷号	12期号:3
ISSN号	1882-0778
DOI	10.7567/1882-0786/ab00ea
通讯作者	Chen,jiezhi() ; Jiang,xiangwei()
英文摘要	Abstract for comprehensive understanding of the impacts of atomic defects in mono-layer transition-metal dichalcogenides (tmds), defects coupling phenomenon are systematically studied in this work through ab initio calculations, by focusing on the device transmission characteristics in mono-layer wse2 tunneling field-effect transistors (tfets). it is found that, although a single se vacancy (vse) or single w vacancy (vw) defect in the channel decreases the device performance significantly, this degradation can be well suppressed with defects coupling. our results strongly indicate that defects could be well designed to obtain high performance tmds tfets.
语种	英语
出版者	IOP Publishing
WOS记录号	IOP:1882-0778-12-3-AB00EA
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429474
专题	半导体研究所
通讯作者	Chen,Jiezhi; Jiang,Xiangwei
作者单位	1.School of Information Science and Engineering, Shandong University, Qingdao, People’s Republic of China 2.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People’s Republic of China
推荐引用方式 GB/T 7714	Wu,Jixuan,Ma,Xiaolei,Chen,Jiezhi,et al. Defects coupling impacts on mono-layer wse2 tunneling field-effect transistors[J]. Applied physics express,2019,12(3).
APA	Wu,Jixuan,Ma,Xiaolei,Chen,Jiezhi,&Jiang,Xiangwei.(2019).Defects coupling impacts on mono-layer wse2 tunneling field-effect transistors.Applied physics express,12(3).
MLA	Wu,Jixuan,et al."Defects coupling impacts on mono-layer wse2 tunneling field-effect transistors".Applied physics express 12.3(2019).

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