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	Enhanced performance of AlN SAW devices with wave propagation along the 〈11?20〉 direction on c-plane sapphire substrate
	Ai,Yujie1; Yang,Shuai1,2; Cheng,Zhe1; Zhang,Lian1; Jia,Lifang1; Dong,Boyu3; Wang,Junxi1,2; Zhang,Yun1,2
刊名	Journal of Physics D: Applied Physics
	2019-03-19
卷号	52期号:21
关键词	AlN film surface acoustic wave propagation direction quality factor insertion loss elastic constant
ISSN号	0022-3727
DOI	10.1088/1361-6463/ab0bf6
英文摘要	Abstract This paper investigates the effect of acoustic wave propagation direction along the a-direction (〈11?20〉) and m-direction (〈1?100〉) on the frequency responses of c-plane AlN based surface acoustic wave (SAW) devices systematically. The experimental results indicate that the resonant frequency (), quality factor (Q), electromechanical coupling coefficient (), insertion loss and out-of-band rejection can be improved for the a-direction compared with the m-direction of an AlN based SAW resonator on sapphire. The Q is 1347 for a one-port SAW resonator along the a-direction, and the minimum insertion loss is 8.71 dB for a two-port SAW resonator along the a-direction. The insertion loss is 3.23 dB lower for the a-direction compared to the m-direction of the AlN film, which may be attributed to the larger acoustic power flow density. The is 45% higher for the a-direction compared to the m-direction of the AlN film, which may be attributed to the larger elastic constant. In addition, our finite element model simulation results reveal the C11 and C44 for the m-direction are 345?GPa and 102?GPa, while C11 and C44 for the a-direction is increased to 429?GPa and 128?GPa, respectively. Our work demonstrates that the a-direction is better than the m-direction of the AlN film for high performance SAW device applications.
语种	英语
出版者	IOP Publishing
WOS记录号	IOP:0022-3727-52-21-ab0bf6
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429471
专题	半导体研究所
作者单位	1.Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China 2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China 3.NAURA Technology Group Co., Ltd, No.8 Wenchang Avenue Beijing Economic-Technological Development Area, Beijing 100176, People’s Republic of China
推荐引用方式 GB/T 7714	Ai,Yujie,Yang,Shuai,Cheng,Zhe,等. Enhanced performance of AlN SAW devices with wave propagation along the 〈11?20〉 direction on c-plane sapphire substrate[J]. Journal of Physics D: Applied Physics,2019,52(21).
APA	Ai,Yujie.,Yang,Shuai.,Cheng,Zhe.,Zhang,Lian.,Jia,Lifang.,...&Zhang,Yun.(2019).Enhanced performance of AlN SAW devices with wave propagation along the 〈11?20〉 direction on c-plane sapphire substrate.Journal of Physics D: Applied Physics,52(21).
MLA	Ai,Yujie,et al."Enhanced performance of AlN SAW devices with wave propagation along the 〈11?20〉 direction on c-plane sapphire substrate".Journal of Physics D: Applied Physics 52.21(2019).

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