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	Preferred growth of nanocrystalline silicon in boron-doped nc-si : h films
	Wei, WS; Wang, TM; Zhang, CX; Li, GH; Han, HX; Ding, K
刊名	Vacuum
	2004-05-03
卷号	74期号:1页码:69-75
关键词	Hydrogenated nanocrystalline silicon film Boron-doped Nanocrystalline silicon Preferred growth electric field
ISSN号	0042-207X
DOI	10.1016/j.vacuum.2003.11.008
通讯作者	Wei, ws(weiwensheng287@sohu.com)
英文摘要	Preferred growth of nanocrystalline silicon (nc-si) was first found in boron-doped hydrogenated nanocrystalline (nc-si:h) films prepared using plasma-enhanced chemical vapor deposition system. the films were characterized by high-resolution transmission electron microscope, x-ray diffraction (xrd) spectrum and raman scattering spectrum. the results showed that the diffraction peaks in xrd spectrum were at 2theta approximate to 47degrees and the exponent of crystalline plane of nc-si in the film was (220). a considerable reason was electric field derived from dc bias made the bonds of si-si array according to a certain orient. the size and crystalline volume fraction of nc-si in boron-doped films were intensively depended on the deposited parameters: diborane (b2h6) doping ratio in silane (sih4), silane dilution ratio in hydrogen (h-2), rf power density, substrate's temperature and reactive pressure, respectively. but preferred growth of nc-si in the boron-doped nc-si:h films cannot be obtained by changing these parameters. (c) 2004 elsevier ltd. all rights reserved.
WOS关键词	MICROCRYSTALLINE SILICON ; MECHANISM ; PHASE
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000221206800007
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429444
专题	半导体研究所
通讯作者	Wei, WS
作者单位	1.Beihang Univ, Ctr Mat Phys & Chem, Sch Sci, Beijing 100083, Peoples R China 2.Beihang Univ, Inst Optoelect Technol, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Lab Semicond Superlattice & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wei, WS,Wang, TM,Zhang, CX,et al. Preferred growth of nanocrystalline silicon in boron-doped nc-si : h films[J]. Vacuum,2004,74(1):69-75.
APA	Wei, WS,Wang, TM,Zhang, CX,Li, GH,Han, HX,&Ding, K.(2004).Preferred growth of nanocrystalline silicon in boron-doped nc-si : h films.Vacuum,74(1),69-75.
MLA	Wei, WS,et al."Preferred growth of nanocrystalline silicon in boron-doped nc-si : h films".Vacuum 74.1(2004):69-75.

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