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Research progress of self-organized ge quantum dots on si substrate
Huang, CJ; Yu, JZ; Wang, QM
刊名Progress in natural science
2004-05-01
卷号14期号:5页码:388-395
关键词Quantum dots Si-based optoelectronics Sige material
ISSN号1002-0071
通讯作者Yu, jz()
英文摘要A review is presented on recent research development of self-organized ge/si quantum dots (qds). emphasis is put on the morphological evolution of the ge quantum dots grown on si (001) substrate, the structure analysis of multilayer ge qds, the optical and electronic properties of these nanostructures, and the approaches to fabricating ordered ge quantum dots.
WOS关键词INALAS WETTING LAYER ; MULTILAYER STRUCTURE ; GE/SI(001) ISLANDS ; EVOLUTION ; COLUMNS
WOS研究方向Materials Science ; Science & Technology - Other Topics
WOS类目Materials Science, Multidisciplinary ; Multidisciplinary Sciences
语种英语
出版者TAYLOR & FRANCIS LTD
WOS记录号WOS:000221600300002
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2429442
专题半导体研究所
通讯作者Yu, JZ
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Huang, CJ,Yu, JZ,Wang, QM. Research progress of self-organized ge quantum dots on si substrate[J]. Progress in natural science,2004,14(5):388-395.
APA Huang, CJ,Yu, JZ,&Wang, QM.(2004).Research progress of self-organized ge quantum dots on si substrate.Progress in natural science,14(5),388-395.
MLA Huang, CJ,et al."Research progress of self-organized ge quantum dots on si substrate".Progress in natural science 14.5(2004):388-395.
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