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	Photoluminescence study of ingan/gan quantum dots grown on passivated gan surface
	Huang, JS; Chen, Z; Luo, XD; Xu, ZY; Ge, WK
刊名	Journal of crystal growth
	2004-01-02
卷号	260期号:1-2页码:13-17
关键词	Atomic force microscopy Low dimensional structures Metalorganic chemical vapor deposition Semiconducting iii-v materials
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2003.08.008
通讯作者	Huang, js()
英文摘要	We have measured photoluminescence (pl) and time-resolve photoluminescence (trpl) from ingan/gan quantum dots (qds) grown on passivated gan surfaces by metalorganic chemical vapor deposition (mocvd). strong pl emission was observed from the qds structure even at room temperature. by comparing the pl and trpl dependence on temperature, a significant difference between the qd and wetting layer emissions was revealed. the qd emission is characterized by a strong exciton localization effect, which leads to a larger thermal activation energy, a nearly constant radiative lifetime independent of temperature and an unusual temperature behavior of the pl peak energy. (c) 2003 elsevier b.v. all rights reserved.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; ROOM-TEMPERATURE ; SELECTIVE GROWTH ; LASER
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000187730000003
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429417
专题	半导体研究所
通讯作者	Huang, JS
作者单位	1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Huang, JS,Chen, Z,Luo, XD,et al. Photoluminescence study of ingan/gan quantum dots grown on passivated gan surface[J]. Journal of crystal growth,2004,260(1-2):13-17.
APA	Huang, JS,Chen, Z,Luo, XD,Xu, ZY,&Ge, WK.(2004).Photoluminescence study of ingan/gan quantum dots grown on passivated gan surface.Journal of crystal growth,260(1-2),13-17.
MLA	Huang, JS,et al."Photoluminescence study of ingan/gan quantum dots grown on passivated gan surface".Journal of crystal growth 260.1-2(2004):13-17.

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