Structural and optical characterization of zn1-xcdxo thin films deposited by dc reactive magnetron sputtering | |
Ma, DW; Ye, ZZ; Huang, JY; Zhao, BH; Wan, SK; Sun, XH; Wang, ZG | |
刊名 | Chinese physics letters
![]() |
2003-06-01 | |
卷号 | 20期号:6页码:942-943 |
ISSN号 | 0256-307X |
通讯作者 | Ma, dw() |
英文摘要 | Zn1-xcdxo crystal thin films with different compositions were prepared on silicon and sapphire substrates by the dc reactive magnetron sputtering technique. x-ray diffraction measurements show that the zn1-xcdxo films are of completely (002)-preferred orientation for x less than or equal to 0.6. for x = 0.8, the elm is a mixture of zno hexagonal wurtzite crystals and cdo cubic crystals. for pure cdo, it is highly (200) preferential-oriented. photoluminescence spectrum measurement shows that the zn1-xcdxo (x = 0.2) thin film has a redshift of 0.14 ev from that of zno reported previously. |
WOS关键词 | PHASE EPITAXIAL-GROWTH ; PHOTOLUMINESCENT PROPERTIES ; SPRAY-PYROLYSIS ; ZNO ; MGXZN1-XO |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
出版者 | CHINESE PHYSICAL SOC |
WOS记录号 | WOS:000183671800047 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2429331 |
专题 | 半导体研究所 |
通讯作者 | Ma, DW |
作者单位 | 1.Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Ma, DW,Ye, ZZ,Huang, JY,et al. Structural and optical characterization of zn1-xcdxo thin films deposited by dc reactive magnetron sputtering[J]. Chinese physics letters,2003,20(6):942-943. |
APA | Ma, DW.,Ye, ZZ.,Huang, JY.,Zhao, BH.,Wan, SK.,...&Wang, ZG.(2003).Structural and optical characterization of zn1-xcdxo thin films deposited by dc reactive magnetron sputtering.Chinese physics letters,20(6),942-943. |
MLA | Ma, DW,et al."Structural and optical characterization of zn1-xcdxo thin films deposited by dc reactive magnetron sputtering".Chinese physics letters 20.6(2003):942-943. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论