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	Study on variable capacitance diode of (p)nc-si : h/(n)c-si heterojunction
	Wei, WS; Wang, TM; Zhang, CX; Li, GH; Li, YX
刊名	Vacuum
	2003-07-25
卷号	71期号:4页码:465-469
关键词	Nc-si : h film (p)nc-si : h/(n)c-si heterojunction Variable capacitance diode
ISSN号	0042-207X
DOI	10.1016/s0042-207x(03)00034-4
通讯作者	Wei, ws()
英文摘要	Hydrogenated nanocrystalline silicon (nc-si:h) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using plasma enhanced chemical vapor deposition (pecvd) system. after evaporating ohm contact electrode on the side of substrate and on the side of nc-si:h film, a structure of electrode/ (p)nc-si:h/(n)c-si/electrode was obtained. it is confirmed by electrical measurement such as i-v curve, c-v curve and dlts that this is a variable capacitance diode. (c) 2003 elsevier science ltd. all rights reserved.
WOS关键词	NANOCRYSTALLINE SILICON FILMS ; ELECTRICAL CHARACTERIZATION ; CONDUCTION MECHANISM ; SPECTROSCOPY ; STATES
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000184263800005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429307
专题	半导体研究所
通讯作者	Wei, WS
作者单位	1.Beijing Univ Aeronaut & Astronaut, Sch Sci, Ctr Mat Phys & Chem, Sch Sci, Beijing 100083, Peoples R China 2.Beijing Univ Aeronaut & Astronaut, Inst Optielect, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Key Lab Semicond Superlattice & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wei, WS,Wang, TM,Zhang, CX,et al. Study on variable capacitance diode of (p)nc-si : h/(n)c-si heterojunction[J]. Vacuum,2003,71(4):465-469.
APA	Wei, WS,Wang, TM,Zhang, CX,Li, GH,&Li, YX.(2003).Study on variable capacitance diode of (p)nc-si : h/(n)c-si heterojunction.Vacuum,71(4),465-469.
MLA	Wei, WS,et al."Study on variable capacitance diode of (p)nc-si : h/(n)c-si heterojunction".Vacuum 71.4(2003):465-469.

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