| The i-v characteristics of nano-silicon/crystal silicon hetero-junction | |
| Liu, M; Liu, H; He, YL | |
| 刊名 | Acta physica sinica
 |
| 2003-11-01 | |
| 卷号 | 52期号:11页码:2875-2878 |
| 关键词 | Hetero-junction Hydrogenated nano-silicon film Transporting mechanism |
| ISSN号 | 1000-3290 |
| 通讯作者 | Liu, m() |
| 英文摘要 | The nc-si : h/c-s hetero-junction is fabricated and studied using nc-si : h films. its i-v curves have good thermal stability and change little in the temperature range from 20 to 200degreesc. the existence of a large amount of interfacial states is resoponsible for the good switch characteristics of the nc-si : h/c-si hetero-junction. |
| WOS关键词 | TRANSISTORS ; HETEROJUNCTION ; FILM |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | CHINESE PHYSICAL SOC |
| WOS记录号 | WOS:000186520100039 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2429281 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, M |
| 作者单位 | 1.Chinese Acad Sci, Microelect Res & Dev Ctr, Beijing 100029, Peoples R China 2.Suzhou Univ Sci & Technol, Dept Appl Phys, Suzhou 215000, Peoples R China 3.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, M,Liu, H,He, YL. The i-v characteristics of nano-silicon/crystal silicon hetero-junction[J]. Acta physica sinica,2003,52(11):2875-2878. |
| APA | Liu, M,Liu, H,&He, YL.(2003).The i-v characteristics of nano-silicon/crystal silicon hetero-junction.Acta physica sinica,52(11),2875-2878. |
| MLA | Liu, M,et al."The i-v characteristics of nano-silicon/crystal silicon hetero-junction".Acta physica sinica 52.11(2003):2875-2878. |
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