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Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure
Yan, QF; Yu, JZ
刊名Japanese journal of applied physics part 1-regular papers short notes & review papers
2003-07-01
卷号42期号:7a页码:4361-4362
关键词Electrooptical switch Silicon-on-insulator Modulation area structure Plasma dispersion effect Integrated opotoelectronics
ISSN号0021-4922
DOI10.1143/jjap.42.4361
通讯作者Yan, qf()
英文摘要This paper reports on the simulation of two 2 x 2 electrooptical switches with different modulation area structures in silicon-on-insulator (soi). a two-dimensional (2d) semiconductor device simulation tool pisces-ii has been used to analyze the dc and transient behaviors of the two devices. the modeling results show that the switch with an n+-i-p+-i-n+ modulation structure has a much faster response speed than the device with a p+-i-n+ modulation structure, although the former requires slightly stronger injection power.
WOS关键词WAVE-GUIDE ; DEVICES
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者INST PURE APPLIED PHYSICS
WOS记录号WOS:000184662000042
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2429269
专题半导体研究所
通讯作者Yan, QF
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
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Yan, QF,Yu, JZ. Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure[J]. Japanese journal of applied physics part 1-regular papers short notes & review papers,2003,42(7a):4361-4362.
APA Yan, QF,&Yu, JZ.(2003).Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure.Japanese journal of applied physics part 1-regular papers short notes & review papers,42(7a),4361-4362.
MLA Yan, QF,et al."Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure".Japanese journal of applied physics part 1-regular papers short notes & review papers 42.7a(2003):4361-4362.
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