| Growth and structural properties of gan films on flat and vicinal sic(0001) substrates | |
| Xie, MH; Cheung, SH; Zheng, LX; Tong, SY; Zhang, BS; Yang, H | |
| 刊名 | International journal of modern physics b
 |
| 2002-01-20 | |
| 卷号 | 16期号:1-2页码:165-172 |
| ISSN号 | 0217-9792 |
| 通讯作者 | Xie, mh() |
| 英文摘要 | Initial stage gan growth by molecular-beam epitaxy (mbe) on sic(0001) substrate is followed by in situ scanning tunneling microscopy. comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. ex situ transmission electron microscopy (tem) and x-ray diffraction (xrd) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. we suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical |
| 语种 | 英语 |
| 出版者 | WORLD SCIENTIFIC PUBL CO PTE LTD |
| WOS记录号 | WOS:000173857900024 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2429223 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xie, MH |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xie, MH,Cheung, SH,Zheng, LX,et al. Growth and structural properties of gan films on flat and vicinal sic(0001) substrates[J]. International journal of modern physics b,2002,16(1-2):165-172. |
| APA | Xie, MH,Cheung, SH,Zheng, LX,Tong, SY,Zhang, BS,&Yang, H.(2002).Growth and structural properties of gan films on flat and vicinal sic(0001) substrates.International journal of modern physics b,16(1-2),165-172. |
| MLA | Xie, MH,et al."Growth and structural properties of gan films on flat and vicinal sic(0001) substrates".International journal of modern physics b 16.1-2(2002):165-172. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论