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	Sige/si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques
	Li, C; Huang, CJ; Cheng, BW; Zuo, YH; Luo, LP; Yu, JZ; Wang, QM
刊名	Journal of applied physics
	2002-08-01
卷号	92期号:3页码:1718-1720
ISSN号	0021-8979
DOI	10.1063/1.1492868
通讯作者	Li, c()
英文摘要	A sige/si multiple-quantum-well resonant-cavity-enhanced (rce) photodetector for 1.3 mum operation was fabricated using bonding reflector process. a full width at half maximum (fwhm) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. compared to our previously reported sige rce photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. the fwhm is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. (c) 2002 american institute of physics.
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000176907700085
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429212
专题	半导体研究所
通讯作者	Li, C
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, C,Huang, CJ,Cheng, BW,et al. Sige/si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques[J]. Journal of applied physics,2002,92(3):1718-1720.
APA	Li, C.,Huang, CJ.,Cheng, BW.,Zuo, YH.,Luo, LP.,...&Wang, QM.(2002).Sige/si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques.Journal of applied physics,92(3),1718-1720.
MLA	Li, C,et al."Sige/si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques".Journal of applied physics 92.3(2002):1718-1720.

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