Sige/si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques | |
Li, C; Huang, CJ; Cheng, BW; Zuo, YH; Luo, LP; Yu, JZ; Wang, QM | |
刊名 | Journal of applied physics
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2002-08-01 | |
卷号 | 92期号:3页码:1718-1720 |
ISSN号 | 0021-8979 |
DOI | 10.1063/1.1492868 |
通讯作者 | Li, c() |
英文摘要 | A sige/si multiple-quantum-well resonant-cavity-enhanced (rce) photodetector for 1.3 mum operation was fabricated using bonding reflector process. a full width at half maximum (fwhm) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. compared to our previously reported sige rce photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. the fwhm is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. (c) 2002 american institute of physics. |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000176907700085 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2429212 |
专题 | 半导体研究所 |
通讯作者 | Li, C |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Li, C,Huang, CJ,Cheng, BW,et al. Sige/si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques[J]. Journal of applied physics,2002,92(3):1718-1720. |
APA | Li, C.,Huang, CJ.,Cheng, BW.,Zuo, YH.,Luo, LP.,...&Wang, QM.(2002).Sige/si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques.Journal of applied physics,92(3),1718-1720. |
MLA | Li, C,et al."Sige/si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques".Journal of applied physics 92.3(2002):1718-1720. |
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