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	Ecr plasma in growth of cubic gan by low pressure mocvd
	Gu, B; Xu, Y; Qin, FW; Wang, SS; Sui, Y; Wang, ZG
刊名	Plasma chemistry and plasma processing
	2002-03-01
卷号	22期号:1页码:159-174
关键词	Ecr plasma Cubic gan Low pressure mocvd
ISSN号	0272-4324
通讯作者	Gu, b()
英文摘要	To heteroepitaxally grow the crystalline cubic-gan (c-gan) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group iii nitride materials. we have obtained the crystalline c-gan film and the heteroepitaxial interface between c-gan and gaas (001) substrate by the ecr plasma-assisted metal organic chemical vapor deposition (pa-mocvd) under low-pressure and low-temperature (similar to600degreesc) on a homemade ecr-plasma semiconductor processing device (espd). in order to decrease the growth temperature, the ecr plasma source was adopted as the activated nitrogen source, therefore the working pressure of mocvd was decreased down to the region less than 1 pa. to eliminate the damages from energetic ions of current plasma source, a multi-cusp cavity,coupling ecr plasma source (mep) was selected to use in our experiment. to decrease the strain and dislocations induced from the large lattice mismatch between c-gan and gaas substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated the experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-gan film and interface between c-gan and gaas(001), and the roles of ecr plasma are described in this contribution.
WOS关键词	MOLECULAR-BEAM EPITAXY ; CYCLOTRON-RESONANCE PLASMA ; LIGHT-EMITTING-DIODES ; VAPOR-PHASE EPITAXY ; GALLIUM NITRIDE ; GAAS ; DIMETHYLHYDRAZINE
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Chemical ; Physics, Applied ; Physics, Fluids & Plasmas
语种	英语
出版者	KLUWER ACADEMIC/PLENUM PUBL
WOS记录号	WOS:000173338500007
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429206
专题	半导体研究所
通讯作者	Gu, B
作者单位	1.Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dept Electromagnet Engn, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Gu, B,Xu, Y,Qin, FW,et al. Ecr plasma in growth of cubic gan by low pressure mocvd[J]. Plasma chemistry and plasma processing,2002,22(1):159-174.
APA	Gu, B,Xu, Y,Qin, FW,Wang, SS,Sui, Y,&Wang, ZG.(2002).Ecr plasma in growth of cubic gan by low pressure mocvd.Plasma chemistry and plasma processing,22(1),159-174.
MLA	Gu, B,et al."Ecr plasma in growth of cubic gan by low pressure mocvd".Plasma chemistry and plasma processing 22.1(2002):159-174.

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