| Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of gan by mocvd | |
| Feng, G; Fu, Y; Xia, JS; Zhu, JJ; Zhang, BS; Shen, XM; Zhao, DG; Yang, H; Liang, JW | |
| 刊名 | Journal of physics d-applied physics
 |
| 2002-11-07 | |
| 卷号 | 35期号:21页码:2731-2734 |
| ISSN号 | 0022-3727 |
| 通讯作者 | Feng, g() |
| 英文摘要 | The lateral epitaxial overgrowth of gan was carried out by low-pressure metalorganic chemical vapor deposition, and the cross section shape of the stripes was characterized by scanning electron microscopy. inclined {11-2n} facets (n approximate to 1-2.5) were observed in the initial growth, and they changed gradually into the vertical {11-20} sidewalls in accordance with the process of the lateral overgrowth. a model was proposed utilizing diffusion equations and boundary conditions to simulate the concentration of the ga species constituent throughout the concentration boundary layer. solutions to these equations are found using the two-dimensional, finite element method. we suggest that the observed evolution of sidewall facets results from the variation of the local v/iii ratio during the process of lateral overgrowth induced by the lateral supply of the ga species from the sinx mask regions to the growing gan regions. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; DEPOSITION ; LAYERS ; FILMS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000179635400010 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2429164 |
| 专题 | 半导体研究所 |
| 通讯作者 | Feng, G |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, G,Fu, Y,Xia, JS,et al. Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of gan by mocvd[J]. Journal of physics d-applied physics,2002,35(21):2731-2734. |
| APA | Feng, G.,Fu, Y.,Xia, JS.,Zhu, JJ.,Zhang, BS.,...&Liang, JW.(2002).Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of gan by mocvd.Journal of physics d-applied physics,35(21),2731-2734. |
| MLA | Feng, G,et al."Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of gan by mocvd".Journal of physics d-applied physics 35.21(2002):2731-2734. |
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