| Growth mode and strain evolution during inn growth on gan(0001) by molecular-beam epitaxy | |
| Ng, YF; Cao, YG; Xie, MH; Wang, XL; Tong, SY | |
| 刊名 | Applied physics letters
 |
| 2002-11-18 | |
| 卷号 | 81期号:21页码:3960-3962 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1523638 |
| 通讯作者 | Xie, mh(mhxie@hkusua.hku.hk) |
| 英文摘要 | Epitaxial growth of inn on gan(0001) by plasma-assisted molecular-beam epitaxy is investigated over a range of growth parameters including source flux and substrate temperature. combining reflection high-energy electron diffraction (rheed) and scanning tunneling microscopy (stm), we establish a relationship between film growth mode and the deposition condition. both two-dimensional (2d) and three-dimensional (3d) growth modes of the film are observed. for 2d growth, sustained rheed intensity oscillations are recorded while stm reveals 2d nucleation islands. for 3d growth, less than three oscillation periods are observed indicating the stranski-krastanov (sk) growth mode of the film. simultaneous measurements of (reciprocal) lattice constant by rheed suggest a gradual relaxation of the strain in film, which commences during the first bilayer (bl) deposition and almost completes after 2-4 bls. for sk growth, 3d islanding initiates after the strain has mostly been relieved, presumably by dislocations, so the islands are likely strain free. (c) 2002 american institute of physics. |
| WOS关键词 | MISFIT DISLOCATIONS ; DEFECTS ; INGAN ; GAN ; REDUCTION ; INDIUM ; LAYERS ; FILMS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000179207300016 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2429126 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xie, MH |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ng, YF,Cao, YG,Xie, MH,et al. Growth mode and strain evolution during inn growth on gan(0001) by molecular-beam epitaxy[J]. Applied physics letters,2002,81(21):3960-3962. |
| APA | Ng, YF,Cao, YG,Xie, MH,Wang, XL,&Tong, SY.(2002).Growth mode and strain evolution during inn growth on gan(0001) by molecular-beam epitaxy.Applied physics letters,81(21),3960-3962. |
| MLA | Ng, YF,et al."Growth mode and strain evolution during inn growth on gan(0001) by molecular-beam epitaxy".Applied physics letters 81.21(2002):3960-3962. |
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