CORC  > 半导体研究所
Dephasing rate in an inas/gaas single-electron quantum dot qubit
Pan, LX; Li, SS; Liu, JL; Niu, ZC; Feng, SL; Zheng, HZ
刊名Science in china series a-mathematics physics astronomy
2002-05-01
卷号45期号:5页码:666-670
关键词Quantum dot Quantum computing Decoherence
ISSN号1006-9283
通讯作者Li, ss()
英文摘要We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of inas/gaas quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. moreover, static electric field is found to efficiently prolong decoherence time. as a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kv/cm if only vacuum fluctuation is taken as the main source for decoherence. our calculated results are useful for guiding the solid-state implementation of quantum computing.
WOS关键词COMPUTATION ; LOGIC
WOS研究方向Mathematics
WOS类目Mathematics, Applied ; Mathematics
语种英语
出版者SCIENCE CHINA PRESS
WOS记录号WOS:000177809200015
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2429104
专题半导体研究所
通讯作者Li, SS
作者单位1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
2.Yiyang Teachers Coll, Dept Phys, Yiyang 413049, Peoples R China
推荐引用方式
GB/T 7714
Pan, LX,Li, SS,Liu, JL,et al. Dephasing rate in an inas/gaas single-electron quantum dot qubit[J]. Science in china series a-mathematics physics astronomy,2002,45(5):666-670.
APA Pan, LX,Li, SS,Liu, JL,Niu, ZC,Feng, SL,&Zheng, HZ.(2002).Dephasing rate in an inas/gaas single-electron quantum dot qubit.Science in china series a-mathematics physics astronomy,45(5),666-670.
MLA Pan, LX,et al."Dephasing rate in an inas/gaas single-electron quantum dot qubit".Science in china series a-mathematics physics astronomy 45.5(2002):666-670.
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