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	Effects of rapid thermal annealing and sio2 encapsulation on ganas/gaas single quantum wells grown by plasma-assisted molecular-beam epitaxy
	Li, LH; Pan, Z; Xu, YQ; Du, Y; Lin, YW; Wu, RH
刊名	Applied physics letters
	2001-04-23
卷号	78期号:17页码:2488-2490
ISSN号	0003-6951
通讯作者	Li, lh()
英文摘要	Effects of rapid thermal annealing and sio2 encapsulation on ganas/gaas single quantum wells grown by plasma-assisted molecular-beam epitaxy were studied. photoluminescence measurements on a series of samples with different well widths and n compositions were used to evaluate the effects. the intermixing of ganas and gaas layers was clearly enhanced by the presence of a sio2-cap layer. however, it was strongly dependent on the n composition. after annealing at 900 degreesc for 30 s, a blueshift up to 62 mev was observed for the sio2-capped region of the sample with n composition of 1.5%, whereas only a small blueshift of 26 mev was exhibited for the bare region. for the sample with the n composition of 3.1%, nearly identical photoluminescence peak energy shift for both the sio2-capped region and the bare region was observed. it is suggested that the enhanced intermixing is mainly dominated by sio2-capped layer induced defects-assisted diffusion for the sample with smaller n composition, while with increasing n composition, the diffusion assisted by interior defects become predominant. (c) 2001 american institute of physics.
WOS关键词	1.3 MU-M ; OPTICAL-PROPERTIES ; BAND-GAP ; SUPERLATTICES ; LASERS ; GAAS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000168304600025
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429073
专题	半导体研究所
通讯作者	Li, LH
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, LH,Pan, Z,Xu, YQ,et al. Effects of rapid thermal annealing and sio2 encapsulation on ganas/gaas single quantum wells grown by plasma-assisted molecular-beam epitaxy[J]. Applied physics letters,2001,78(17):2488-2490.
APA	Li, LH,Pan, Z,Xu, YQ,Du, Y,Lin, YW,&Wu, RH.(2001).Effects of rapid thermal annealing and sio2 encapsulation on ganas/gaas single quantum wells grown by plasma-assisted molecular-beam epitaxy.Applied physics letters,78(17),2488-2490.
MLA	Li, LH,et al."Effects of rapid thermal annealing and sio2 encapsulation on ganas/gaas single quantum wells grown by plasma-assisted molecular-beam epitaxy".Applied physics letters 78.17(2001):2488-2490.

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