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	Analysis of the temperature-induced transition to current self-oscillations in doped gaas/alas superlattices
	Li, CY; Sun, BQ; Jiang, DS; Wang, JN
刊名	Semiconductor science and technology
	2001-04-01
卷号	16期号:4页码:239-242
ISSN号	0268-1242
通讯作者	Li, cy()
英文摘要	We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. the current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (v(f)), as the peak-valley ratio in the v(f) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. the simulated calculation, which takes the difference in v(f) curves into consideration, gives a good agreement with the experimental results.
WOS关键词	GAAS-ALAS SUPERLATTICES ; ELECTRIC-FIELD DOMAINS
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000168071200010
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429063
专题	半导体研究所
通讯作者	Li, CY
作者单位	1.Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Li, CY,Sun, BQ,Jiang, DS,et al. Analysis of the temperature-induced transition to current self-oscillations in doped gaas/alas superlattices[J]. Semiconductor science and technology,2001,16(4):239-242.
APA	Li, CY,Sun, BQ,Jiang, DS,&Wang, JN.(2001).Analysis of the temperature-induced transition to current self-oscillations in doped gaas/alas superlattices.Semiconductor science and technology,16(4),239-242.
MLA	Li, CY,et al."Analysis of the temperature-induced transition to current self-oscillations in doped gaas/alas superlattices".Semiconductor science and technology 16.4(2001):239-242.

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