| Radiative recombination characteristics in gaas multilayer n(+)-i interfaces | |
| Shen, WZ; Jiang, LF; Yu, G; Lai, ZY; Wang, XG; Shen, SC; Cao, X | |
| 刊名 | Journal of applied physics
 |
| 2001-11-15 | |
| 卷号 | 90期号:10页码:5444-5446 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Shen, wz() |
| 英文摘要 | In this communication, we have carried out a detailed investigation of radiative recombination in n-gaas homojunction far-infrared detector structures with multilayer emitter (n(+))-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. the observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. a photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. (c) 2001 american institute of physics. |
| WOS关键词 | FAR-INFRARED DETECTORS ; SI-DOPED GAAS ; PHOTOLUMINESCENCE ; LAYERS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000171918700089 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2429027 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shen, WZ |
| 作者单位 | 1.Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, New Mat Dept, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shen, WZ,Jiang, LF,Yu, G,et al. Radiative recombination characteristics in gaas multilayer n(+)-i interfaces[J]. Journal of applied physics,2001,90(10):5444-5446. |
| APA | Shen, WZ.,Jiang, LF.,Yu, G.,Lai, ZY.,Wang, XG.,...&Cao, X.(2001).Radiative recombination characteristics in gaas multilayer n(+)-i interfaces.Journal of applied physics,90(10),5444-5446. |
| MLA | Shen, WZ,et al."Radiative recombination characteristics in gaas multilayer n(+)-i interfaces".Journal of applied physics 90.10(2001):5444-5446. |
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