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	Modification of emission wavelength of self-assembled in(ga)as/gaas quantum dots covered by inxga1-xas(0 <= x <= 0.3) layer
	Niu, ZC; Wang, XD; Miao, ZH; Feng, SL
刊名	Journal of crystal growth
	2001-07-01
卷号	227页码:1062-1068
关键词	Crystal morphology Quantum dots Molecular beam epitaxy Semiconducting gallium arsenide Semiconducting indium gallium arsenide
ISSN号	0022-0248
通讯作者	Niu, zc()
英文摘要	Red shifts of emission wavelength of self-organized in(cla)as/gaas quantum dots (qds) covered by 3 nm thick inxga1-xas layer with three different in mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. transmission electron microscopy images demonstrate that the stress along growth direction in the inas dots was reduced due to introducing the inxga1-xas (x = 0.1, 0.2 and 0.3) covering layer instead of gaas layer. atomic force microscopy pictures show a smoother surface of inas islands covered by an in0.2ga0.8as layer. it is explained by the calculations that the redshifts of the photoluminescence (pl) spectra from the qds covered by the inxga1-xas (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the inas/gaas intermixing in the inas qds. the temperature dependent pl spectra further confirm that the ingaas covering layer can effectively suppress the temperature sensitivity of pl emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcv at room temperature has been obtained successfully from in,in0.5ga0.5as/gaas self-assembled qds covered by a 3-nm in0.2ga0.2as strain reducing layer. (c) 2001 elsevier science b.v. all rights reserved.
WOS关键词	1.35 MU-M ; GAAS-SURFACES ; PHOTOLUMINESCENCE ; ISLANDS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000169557600204
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428996
专题	半导体研究所
通讯作者	Niu, ZC
作者单位	Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Niu, ZC,Wang, XD,Miao, ZH,et al. Modification of emission wavelength of self-assembled in(ga)as/gaas quantum dots covered by inxga1-xas(0 <= x <= 0.3) layer[J]. Journal of crystal growth,2001,227:1062-1068.
APA	Niu, ZC,Wang, XD,Miao, ZH,&Feng, SL.(2001).Modification of emission wavelength of self-assembled in(ga)as/gaas quantum dots covered by inxga1-xas(0 <= x <= 0.3) layer.Journal of crystal growth,227,1062-1068.
MLA	Niu, ZC,et al."Modification of emission wavelength of self-assembled in(ga)as/gaas quantum dots covered by inxga1-xas(0 <= x <= 0.3) layer".Journal of crystal growth 227(2001):1062-1068.

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