X-ray diffraction determination of the fractions of hexagonal and twinned phases in cubic gan layers grown on (001)gaas substrate | |
Qu, B; Zheng, XH; Wang, YT; Feng, ZH; Liu, SA; Lin, SM; Yang, H; Liang, JW | |
刊名 | Thin solid films |
2001-07-23 | |
卷号 | 392期号:1页码:29-33 |
关键词 | Gallium nitride X-ray diffraction |
ISSN号 | 0040-6090 |
通讯作者 | Qu, b() |
英文摘要 | Being an established qualitative method for investigating presence of additional phases in single crystal materials, x-ray diffraction has been used widely to characterize their structural qualities and to improve the preparation techniques. here quantitative x-ray diffraction analysis is described which takes into account diffraction geometry and multiplicity factors. using double-crystal x-ray four-circle diffractometer, pole figures of cubic (002), {111} and hexagonal {10 (1) over bar0} and reciprocal space mapping were measured to investigate the structural characters of mixed phases and to obtain their diffraction geometry and multiplicity factors. the fractions of cubic twins and hexagonal inclusions were calculated by the integrated intensities of rocking curves of cubic (002), cubic twin {111}, hexagonal {10 (1) over bar0} and hexagonal {10 (1) over bar1}. without multiplicity factors, the calculated results are portions of mixed phases in only one {111} plane of cubic gan. diffraction geometry factor can eliminate the effects of omega and x angles on the irradiated surface areas for different scattered planes. (c) 2001 elsevier science b.v. all rights reserved. |
WOS关键词 | EPITAXY ; RATIO |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE SA |
WOS记录号 | WOS:000169686600005 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428987 |
专题 | 半导体研究所 |
通讯作者 | Qu, B |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Labs Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Qu, B,Zheng, XH,Wang, YT,et al. X-ray diffraction determination of the fractions of hexagonal and twinned phases in cubic gan layers grown on (001)gaas substrate[J]. Thin solid films,2001,392(1):29-33. |
APA | Qu, B.,Zheng, XH.,Wang, YT.,Feng, ZH.,Liu, SA.,...&Liang, JW.(2001).X-ray diffraction determination of the fractions of hexagonal and twinned phases in cubic gan layers grown on (001)gaas substrate.Thin solid films,392(1),29-33. |
MLA | Qu, B,et al."X-ray diffraction determination of the fractions of hexagonal and twinned phases in cubic gan layers grown on (001)gaas substrate".Thin solid films 392.1(2001):29-33. |
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