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X-ray diffraction determination of the fractions of hexagonal and twinned phases in cubic gan layers grown on (001)gaas substrate
Qu, B; Zheng, XH; Wang, YT; Feng, ZH; Liu, SA; Lin, SM; Yang, H; Liang, JW
刊名Thin solid films
2001-07-23
卷号392期号:1页码:29-33
关键词Gallium nitride X-ray diffraction
ISSN号0040-6090
通讯作者Qu, b()
英文摘要Being an established qualitative method for investigating presence of additional phases in single crystal materials, x-ray diffraction has been used widely to characterize their structural qualities and to improve the preparation techniques. here quantitative x-ray diffraction analysis is described which takes into account diffraction geometry and multiplicity factors. using double-crystal x-ray four-circle diffractometer, pole figures of cubic (002), {111} and hexagonal {10 (1) over bar0} and reciprocal space mapping were measured to investigate the structural characters of mixed phases and to obtain their diffraction geometry and multiplicity factors. the fractions of cubic twins and hexagonal inclusions were calculated by the integrated intensities of rocking curves of cubic (002), cubic twin {111}, hexagonal {10 (1) over bar0} and hexagonal {10 (1) over bar1}. without multiplicity factors, the calculated results are portions of mixed phases in only one {111} plane of cubic gan. diffraction geometry factor can eliminate the effects of omega and x angles on the irradiated surface areas for different scattered planes. (c) 2001 elsevier science b.v. all rights reserved.
WOS关键词EPITAXY ; RATIO
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
出版者ELSEVIER SCIENCE SA
WOS记录号WOS:000169686600005
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2428987
专题半导体研究所
通讯作者Qu, B
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Labs Integrated Optoelect, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Qu, B,Zheng, XH,Wang, YT,et al. X-ray diffraction determination of the fractions of hexagonal and twinned phases in cubic gan layers grown on (001)gaas substrate[J]. Thin solid films,2001,392(1):29-33.
APA Qu, B.,Zheng, XH.,Wang, YT.,Feng, ZH.,Liu, SA.,...&Liang, JW.(2001).X-ray diffraction determination of the fractions of hexagonal and twinned phases in cubic gan layers grown on (001)gaas substrate.Thin solid films,392(1),29-33.
MLA Qu, B,et al."X-ray diffraction determination of the fractions of hexagonal and twinned phases in cubic gan layers grown on (001)gaas substrate".Thin solid films 392.1(2001):29-33.
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