Shape evolution of ge/si(001) islands induced by strain-driven alloying | |
Huang, CJ; Zuo, YH; Li, DZ; Cheng, BW; Luo, LP; Yu, JZ; Wang, QM | |
刊名 | Applied physics letters
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2001-06-11 | |
卷号 | 78期号:24页码:3881-3883 |
ISSN号 | 0003-6951 |
通讯作者 | Zuo, yh() |
英文摘要 | The shape evolution of ge/si(001) islands grown by ultrahigh vacuum chemical vapor deposition were investigated by atomic force microscopy at different deposition rates. we find that, at low deposition rates, the evolution of islands follows the conventional pathway by which the islands form the pyramid islands, evolve into dome islands, and dislocate at a superdome shape with increasing coverage. while at a high deposition rate of 3 monolayers per minute, the dome islands evolve towards the pyramids by a reduction of the contact angle. the presence of the atomic intermixing between the ge islands and si substrate at high deposition rate is responsible for the reverse evolution. (c) 2001 american institute of physics. |
WOS关键词 | TEMPERATURE-DEPENDENCE ; TRANSITION ; GROWTH ; GE ; SI(001) ; PATHWAY |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000169226200039 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428985 |
专题 | 半导体研究所 |
通讯作者 | Zuo, YH |
作者单位 | Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Huang, CJ,Zuo, YH,Li, DZ,et al. Shape evolution of ge/si(001) islands induced by strain-driven alloying[J]. Applied physics letters,2001,78(24):3881-3883. |
APA | Huang, CJ.,Zuo, YH.,Li, DZ.,Cheng, BW.,Luo, LP.,...&Wang, QM.(2001).Shape evolution of ge/si(001) islands induced by strain-driven alloying.Applied physics letters,78(24),3881-3883. |
MLA | Huang, CJ,et al."Shape evolution of ge/si(001) islands induced by strain-driven alloying".Applied physics letters 78.24(2001):3881-3883. |
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