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	Shape evolution of ge/si(001) islands induced by strain-driven alloying
	Huang, CJ; Zuo, YH; Li, DZ; Cheng, BW; Luo, LP; Yu, JZ; Wang, QM
刊名	Applied physics letters
	2001-06-11
卷号	78期号:24页码:3881-3883
ISSN号	0003-6951
通讯作者	Zuo, yh()
英文摘要	The shape evolution of ge/si(001) islands grown by ultrahigh vacuum chemical vapor deposition were investigated by atomic force microscopy at different deposition rates. we find that, at low deposition rates, the evolution of islands follows the conventional pathway by which the islands form the pyramid islands, evolve into dome islands, and dislocate at a superdome shape with increasing coverage. while at a high deposition rate of 3 monolayers per minute, the dome islands evolve towards the pyramids by a reduction of the contact angle. the presence of the atomic intermixing between the ge islands and si substrate at high deposition rate is responsible for the reverse evolution. (c) 2001 american institute of physics.
WOS关键词	TEMPERATURE-DEPENDENCE ; TRANSITION ; GROWTH ; GE ; SI(001) ; PATHWAY
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000169226200039
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428985
专题	半导体研究所
通讯作者	Zuo, YH
作者单位	Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Huang, CJ,Zuo, YH,Li, DZ,et al. Shape evolution of ge/si(001) islands induced by strain-driven alloying[J]. Applied physics letters,2001,78(24):3881-3883.
APA	Huang, CJ.,Zuo, YH.,Li, DZ.,Cheng, BW.,Luo, LP.,...&Wang, QM.(2001).Shape evolution of ge/si(001) islands induced by strain-driven alloying.Applied physics letters,78(24),3881-3883.
MLA	Huang, CJ,et al."Shape evolution of ge/si(001) islands induced by strain-driven alloying".Applied physics letters 78.24(2001):3881-3883.

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