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	Structural characterization of cubic gan grown on gaas(001) substrates
	Zheng, XH; Qu, B; Wang, YT; Yang, H; Liang, JW; Han, JY
刊名	Chinese journal of electronics
	2001-04-01
卷号	10期号:2页码:219-222
关键词	Cubic gan X-ray double crystal diffraction Structural characteristics
ISSN号	1022-4653
通讯作者	Zheng, xh()
英文摘要	Structural characteristics of cubic gan epilayers grown on gaas(001) were studied using x-ray double-crystal diffraction technique. the structure factors of cubic gan(002) and (004) components are approximately identical. however, the integrated intensities of the rocking curve for cubic (002) components are over five times as those of (004) components. the discrepancy has been interpreted in detail considering other factors. in the conventional double crystal rocking curve, the peak broadening includes such information caused by the orientation distribution (mosaicity) and the distribution of lattice spacing. these two kinds of distributions can be distinguished by the triple-axis diffraction in which an analyser crystal is placed in front of the detector. moreover, the peak broadening was analysed by reciprocal lattice construction and eward sphere. by using triple-axis diffraction of cubic (002) and (113) components, domain size and dislocation density were estimated. the fully relaxed lattice parameter of cubic gan was determined to be about 0.451 +/- 0.001nm.
WOS关键词	CONTINUOUS-WAVE OPERATION ; EPITAXIAL-GROWTH ; HEXAGONAL GAN ; LASER-DIODES ; THIN-FILMS ; MBE
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
语种	英语
出版者	TECHNOLOGY EXCHANGE LIMITED HONG KONG
WOS记录号	WOS:000168485300018
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428956
专题	半导体研究所
通讯作者	Zheng, XH
作者单位	1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Geol Sci, Inst Minerals & Resources, Beijing 100037, Peoples R China
推荐引用方式 GB/T 7714	Zheng, XH,Qu, B,Wang, YT,et al. Structural characterization of cubic gan grown on gaas(001) substrates[J]. Chinese journal of electronics,2001,10(2):219-222.
APA	Zheng, XH,Qu, B,Wang, YT,Yang, H,Liang, JW,&Han, JY.(2001).Structural characterization of cubic gan grown on gaas(001) substrates.Chinese journal of electronics,10(2),219-222.
MLA	Zheng, XH,et al."Structural characterization of cubic gan grown on gaas(001) substrates".Chinese journal of electronics 10.2(2001):219-222.

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