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	Influence of dual incorporation of in and n on the luminescence of gainnas/gaas single quantum wells
	Sun, BQ; Jiang, DS; Pan, Z; Li, LH; Wu, RH
刊名	Applied physics letters
	2000-12-18
卷号	77期号:25页码:4148-4150
ISSN号	0003-6951
通讯作者	Sun, bq()
英文摘要	The optical properties of above- and below-band-edge transitions have been investigated by incorporating in atoms into ganas/gaas single quantum wells. the experimental results show that with increasing in concentration the interband luminescence is improved and the luminescence intensity below the band edge in gainnas/gaas decreases significantly. an interpretation is given that n atoms are preferable to form a covalent bond with in than with ga atoms in a gainnas alloy, due to the compensation of the atomic-size difference between in and n atoms on the gaas substrate. the photoreflectance spectra of the gainnas/gaas single quantum well support the assignment of an intrinsic mechanism to the high-energy luminescence peak. (c) 2000 american institute of physics. [s0003- 6951(00)01752-6].
WOS关键词	MOLECULAR-BEAM EPITAXY ; GAASN
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000165824200023
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428941
专题	半导体研究所
通讯作者	Sun, BQ
作者单位	1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Sun, BQ,Jiang, DS,Pan, Z,et al. Influence of dual incorporation of in and n on the luminescence of gainnas/gaas single quantum wells[J]. Applied physics letters,2000,77(25):4148-4150.
APA	Sun, BQ,Jiang, DS,Pan, Z,Li, LH,&Wu, RH.(2000).Influence of dual incorporation of in and n on the luminescence of gainnas/gaas single quantum wells.Applied physics letters,77(25),4148-4150.
MLA	Sun, BQ,et al."Influence of dual incorporation of in and n on the luminescence of gainnas/gaas single quantum wells".Applied physics letters 77.25(2000):4148-4150.

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