Influence of dual incorporation of in and n on the luminescence of gainnas/gaas single quantum wells | |
Sun, BQ; Jiang, DS; Pan, Z; Li, LH; Wu, RH | |
刊名 | Applied physics letters
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2000-12-18 | |
卷号 | 77期号:25页码:4148-4150 |
ISSN号 | 0003-6951 |
通讯作者 | Sun, bq() |
英文摘要 | The optical properties of above- and below-band-edge transitions have been investigated by incorporating in atoms into ganas/gaas single quantum wells. the experimental results show that with increasing in concentration the interband luminescence is improved and the luminescence intensity below the band edge in gainnas/gaas decreases significantly. an interpretation is given that n atoms are preferable to form a covalent bond with in than with ga atoms in a gainnas alloy, due to the compensation of the atomic-size difference between in and n atoms on the gaas substrate. the photoreflectance spectra of the gainnas/gaas single quantum well support the assignment of an intrinsic mechanism to the high-energy luminescence peak. (c) 2000 american institute of physics. [s0003- 6951(00)01752-6]. |
WOS关键词 | MOLECULAR-BEAM EPITAXY ; GAASN |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000165824200023 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428941 |
专题 | 半导体研究所 |
通讯作者 | Sun, BQ |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Sun, BQ,Jiang, DS,Pan, Z,et al. Influence of dual incorporation of in and n on the luminescence of gainnas/gaas single quantum wells[J]. Applied physics letters,2000,77(25):4148-4150. |
APA | Sun, BQ,Jiang, DS,Pan, Z,Li, LH,&Wu, RH.(2000).Influence of dual incorporation of in and n on the luminescence of gainnas/gaas single quantum wells.Applied physics letters,77(25),4148-4150. |
MLA | Sun, BQ,et al."Influence of dual incorporation of in and n on the luminescence of gainnas/gaas single quantum wells".Applied physics letters 77.25(2000):4148-4150. |
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