Investigation on anisotropy of vertical-cavity surface-emitting lasers | |
Liu, SA; Lin, SM; Cheng, P; Zhang, GB; Wang, QM; Chen, Y; Li, GH; Han, HX | |
刊名 | Journal of applied physics |
2000-09-01 | |
卷号 | 88期号:5页码:3102-3104 |
ISSN号 | 0021-8979 |
通讯作者 | Liu, sa() |
英文摘要 | We have studied the spontaneous emission of polarized excitons in the gainp/algainp vertical-cavity surface-emitting lasers from 50 k to room temperature. it is observed that the spontaneous emission peak enters and leaves the resonant regime. at the resonant regime, the emission intensities of the perpendicularly and horizontally polarized excitons are enhanced and their proportions are different from that in nonresonant regime. these experimental results are explained by the dressed exciton theory of the semiconductor microcavity device. based on this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy. (c) 2000 american institute of physics. [s0021-8979(00)05315-9]. |
WOS关键词 | SEMICONDUCTOR MICROCAVITIES ; POLARITON PHOTOLUMINESCENCE ; SPONTANEOUS EMISSION ; OPERATION ; EXCITONS |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000088796500152 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428930 |
专题 | 半导体研究所 |
通讯作者 | Liu, SA |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, SA,Lin, SM,Cheng, P,et al. Investigation on anisotropy of vertical-cavity surface-emitting lasers[J]. Journal of applied physics,2000,88(5):3102-3104. |
APA | Liu, SA.,Lin, SM.,Cheng, P.,Zhang, GB.,Wang, QM.,...&Han, HX.(2000).Investigation on anisotropy of vertical-cavity surface-emitting lasers.Journal of applied physics,88(5),3102-3104. |
MLA | Liu, SA,et al."Investigation on anisotropy of vertical-cavity surface-emitting lasers".Journal of applied physics 88.5(2000):3102-3104. |
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