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	Optical characterization of high-purity cubic gan grown on gaas (001) substrate by metalorganic chemical vapor deposition
	Xu, DP; Yang, H; Li, JB; Zhao, DG; Li, SF; Zhuang, SM; Wu, RH; Chen, Y; Li, GH
刊名	Applied physics letters
	2000-05-22
卷号	76期号:21页码:3025-3027
ISSN号	0003-6951
通讯作者	Yang, h()
英文摘要	The optical properties of cubic gan films have been investigated in the temperature range of 10-300 k. five peaks were observed at 10 k. from the dependence of photoluminescence emissions on the temperature and excitation intensity, we have assigned two of the five peaks (2.926 and 2.821 ev) to donor-acceptor pair (dap) transitions. furthermore, these two peaks were found to be related to a common shallow donor involved in the peak position previously reported at 3.150 ev. the intensities of dap transitions were much weaker than that of excitonic emission even at low temperature, indicating a relatively high purity of our samples. (c) 2000 american institute of physics. [s0003-6951(00)00921-9].
WOS关键词	MOLECULAR-BEAM EPITAXY ; PHOTOLUMINESCENCE
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000087066500017
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428782
专题	半导体研究所
通讯作者	Yang, H
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Xu, DP,Yang, H,Li, JB,et al. Optical characterization of high-purity cubic gan grown on gaas (001) substrate by metalorganic chemical vapor deposition[J]. Applied physics letters,2000,76(21):3025-3027.
APA	Xu, DP.,Yang, H.,Li, JB.,Zhao, DG.,Li, SF.,...&Li, GH.(2000).Optical characterization of high-purity cubic gan grown on gaas (001) substrate by metalorganic chemical vapor deposition.Applied physics letters,76(21),3025-3027.
MLA	Xu, DP,et al."Optical characterization of high-purity cubic gan grown on gaas (001) substrate by metalorganic chemical vapor deposition".Applied physics letters 76.21(2000):3025-3027.

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