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	Self-limiting mbe growth and characterization of three-dimensionally confined nanostructures on patterned gaas(311)a substrates
	Niu, ZC; Notzel, R; Jahn, U; Schonherr, HP; Fricke, J; Ploog, KH
刊名	Journal of electronic materials
	1999
卷号	28期号:1页码:1-5
关键词	High-index substrates Molecular beam epitaxy (mbe) Patterned growth Three-dimensionally confined nanostructures
ISSN号	0361-5235
通讯作者	Niu, zc()
英文摘要	The formation of triangular-shaped dot-like (td) structures grown by molecular beam epitaxy on gaas (311)a substrates patterned with square- and triangular-shaped holes is compared. on substrates patterned with square-shaped holes, td structures are formed via the pinch-off of two symmetrically arranged {111} planes which develop freely in the regions between the holes on the original substrate surface, while the (111)a sidewalls of the as-etched holes develop a rough morphology during growth. the evolution of the rough ( 1 1 1)a sidewalls is eliminated on substrates patterned with triangular shaped holes resulting in similar td structures with highly improved uniformity over the entire pattern. spectrally and spatially resolved cathodoluminescence spectroscopy reveals the lateral variation of the quantum-well confinement energy in the td structures generating distinct lateral energy barriers between the top portion and the nearby smooth regions with efficient radiative recombination. formation of td structures provides a new approach do fabricate three-dimensionally confined nanostructures in a controlled manner.
WOS关键词	MOLECULAR-BEAM EPITAXY ; SIDEWALL QUANTUM WIRES ; GAAS ; PHOTOLUMINESCENCE ; DOTS
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	MINERALS METALS MATERIALS SOC
WOS记录号	WOS:000078057700001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428741
专题	半导体研究所
通讯作者	Niu, ZC
作者单位	1.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany 2.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Niu, ZC,Notzel, R,Jahn, U,et al. Self-limiting mbe growth and characterization of three-dimensionally confined nanostructures on patterned gaas(311)a substrates[J]. Journal of electronic materials,1999,28(1):1-5.
APA	Niu, ZC,Notzel, R,Jahn, U,Schonherr, HP,Fricke, J,&Ploog, KH.(1999).Self-limiting mbe growth and characterization of three-dimensionally confined nanostructures on patterned gaas(311)a substrates.Journal of electronic materials,28(1),1-5.
MLA	Niu, ZC,et al."Self-limiting mbe growth and characterization of three-dimensionally confined nanostructures on patterned gaas(311)a substrates".Journal of electronic materials 28.1(1999):1-5.

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