Effect of si doping on cubic gan films grown on gaas(100) | |
Xu, DP; Yang, H; Li, JB; Li, SF; Wang, YT; Zhao, DG; Wu, RH | |
刊名 | Journal of crystal growth
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1999-10-01 | |
卷号 | 206期号:1-2页码:150-154 |
关键词 | Gan Cubic Hexagonal Photoluminescence Xrd |
ISSN号 | 0022-0248 |
通讯作者 | Xu, dp() |
英文摘要 | Epitaxial layers of cubic gan have been grown by metalorganic vapor-phase epitaxy (movpe) with si-doping carrier concentration ranging from 3 x 10(18) to 2.4 x 10(20)/cm(3). si-doping decreased the yellow emission of gan. however, the heavily doped n-type material has been found to induce phase transformation. as the si-doping concentration increases, the hexagonal gan nanoparticles increase. judged from the linewidth of x-ray rocking curve, si-doping increases the density of dislocations and stacking faults. based on these observations, a model is proposed to interpret the phase transformation induced by the generated microdefects, such as dislocations and precipitates, and induced stacking faults under heavy si-doping. (c) 1999 elsevier science b.v. all rights reserved. |
WOS关键词 | LIGHT-EMITTING DIODES ; DOPED GAN ; SILICON ; SEMICONDUCTORS ; SAPPHIRE |
WOS研究方向 | Crystallography ; Materials Science ; Physics |
WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE BV |
WOS记录号 | WOS:000082856900021 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428724 |
专题 | 半导体研究所 |
通讯作者 | Xu, DP |
作者单位 | Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Xu, DP,Yang, H,Li, JB,et al. Effect of si doping on cubic gan films grown on gaas(100)[J]. Journal of crystal growth,1999,206(1-2):150-154. |
APA | Xu, DP.,Yang, H.,Li, JB.,Li, SF.,Wang, YT.,...&Wu, RH.(1999).Effect of si doping on cubic gan films grown on gaas(100).Journal of crystal growth,206(1-2),150-154. |
MLA | Xu, DP,et al."Effect of si doping on cubic gan films grown on gaas(100)".Journal of crystal growth 206.1-2(1999):150-154. |
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