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	Effect of si doping on cubic gan films grown on gaas(100)
	Xu, DP; Yang, H; Li, JB; Li, SF; Wang, YT; Zhao, DG; Wu, RH
刊名	Journal of crystal growth
	1999-10-01
卷号	206期号:1-2页码:150-154
关键词	Gan Cubic Hexagonal Photoluminescence Xrd
ISSN号	0022-0248
通讯作者	Xu, dp()
英文摘要	Epitaxial layers of cubic gan have been grown by metalorganic vapor-phase epitaxy (movpe) with si-doping carrier concentration ranging from 3 x 10(18) to 2.4 x 10(20)/cm(3). si-doping decreased the yellow emission of gan. however, the heavily doped n-type material has been found to induce phase transformation. as the si-doping concentration increases, the hexagonal gan nanoparticles increase. judged from the linewidth of x-ray rocking curve, si-doping increases the density of dislocations and stacking faults. based on these observations, a model is proposed to interpret the phase transformation induced by the generated microdefects, such as dislocations and precipitates, and induced stacking faults under heavy si-doping. (c) 1999 elsevier science b.v. all rights reserved.
WOS关键词	LIGHT-EMITTING DIODES ; DOPED GAN ; SILICON ; SEMICONDUCTORS ; SAPPHIRE
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000082856900021
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428724
专题	半导体研究所
通讯作者	Xu, DP
作者单位	Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Xu, DP,Yang, H,Li, JB,et al. Effect of si doping on cubic gan films grown on gaas(100)[J]. Journal of crystal growth,1999,206(1-2):150-154.
APA	Xu, DP.,Yang, H.,Li, JB.,Li, SF.,Wang, YT.,...&Wu, RH.(1999).Effect of si doping on cubic gan films grown on gaas(100).Journal of crystal growth,206(1-2),150-154.
MLA	Xu, DP,et al."Effect of si doping on cubic gan films grown on gaas(100)".Journal of crystal growth 206.1-2(1999):150-154.

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