CORC  > 半导体研究所
Pressure behavior of deep centers in znsxte1-x alloys
Liu, NZ; Li, GH; Zhang, W; Zhu, ZM; Han, HX; Wang, ZP; Ge, WK; Sou, IK
刊名Physica status solidi b-basic research
1999
卷号211期号:1页码:163-169
ISSN号0370-1972
通讯作者Liu, nz()
英文摘要We have measured photoluminescence of znsxte1-x alloys (x > 0.7) at 300 k and under hydrostatic pressure up to 7 gpa. the spectra contain only a broad emission band under excitation of the 406.7 nm line. its pressure coefficients are 47, 62 and 45 mev/gpa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. the stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 ev for the three samples, respectively. the small pressure coefficient and large stokes shift indicate that the emission band observed in our samples may correspond to the te isoelectronic center in the znsxte1-x alloy.
WOS关键词ABSORPTION-EDGE ; STRAINS ; ZNS
WOS研究方向Physics
WOS类目Physics, Condensed Matter
语种英语
出版者WILEY-V C H VERLAG GMBH
WOS记录号WOS:000078185000027
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2428687
专题半导体研究所
通讯作者Liu, NZ
作者单位1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong
推荐引用方式
GB/T 7714
Liu, NZ,Li, GH,Zhang, W,et al. Pressure behavior of deep centers in znsxte1-x alloys[J]. Physica status solidi b-basic research,1999,211(1):163-169.
APA Liu, NZ.,Li, GH.,Zhang, W.,Zhu, ZM.,Han, HX.,...&Sou, IK.(1999).Pressure behavior of deep centers in znsxte1-x alloys.Physica status solidi b-basic research,211(1),163-169.
MLA Liu, NZ,et al."Pressure behavior of deep centers in znsxte1-x alloys".Physica status solidi b-basic research 211.1(1999):163-169.
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