| Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity | |
| Lin, LY; Zhong, XR; Chen, NF | |
| 刊名 | Journal of crystal growth
 |
| 1998-07-01 | |
| 卷号 | 191期号:3页码:586-588 |
| 关键词 | Si-gaas Stoichiometry Microgravity |
| ISSN号 | 0022-0248 |
| 通讯作者 | Chen, nf(nfchen@red.semi.ac.cn) |
| 英文摘要 | A semi-insulating (si) gaas single crystal was recently grown in a retrievable satellite. the average etch pit density (epd) of dislocations in the crystal revealed by molten koh is 2.0 x 10(4) cm(-2), and the highest epd is 3.1 x 10(4) cm(-2) this result indicates a quite good homogenity of the epd which is much better than the ground-grown crystals. a similar better homogenity of the stoichiometry i.e., the [as]/([as] + [ga]) ratio has been found in the space-grown si-gaas single crystal studied nondestructively using a new mapping method based upon x-ray bond diffraction. the average stoichiometry in the space-grown crystal is 0.50007 with mean-square deviation of 6x10(-6), while the average stoichiometry in ground-grown si-gaas crystal is more than 0.50010. (c) 1998 elsevier science b.v. all rights reserved. |
| WOS关键词 | DEFECTS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000075032500038 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2428591 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, NF |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lin, LY,Zhong, XR,Chen, NF. Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity[J]. Journal of crystal growth,1998,191(3):586-588. |
| APA | Lin, LY,Zhong, XR,&Chen, NF.(1998).Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity.Journal of crystal growth,191(3),586-588. |
| MLA | Lin, LY,et al."Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity".Journal of crystal growth 191.3(1998):586-588. |
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