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	Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors
	Yang, R
刊名	Journal of physical chemistry b
	1998-05-14
卷号	102期号:20页码:3986-3992
ISSN号	1089-5647
通讯作者	Yang, r()
英文摘要	This paper discovers some shortcomings in the algorithm for the incorporation of si into gaas in the gaas vpe process. these faults arise from neglecting a link, the compatibility relationship, in chemical thermodynamics. the meaning of said relationship is as follows: in an equilibrium complex system, each species can only contribute one and the same quantity (its equilibrium quantity) to the different equilibria of the various reactions involving it; yet even under this restriction, every equilibrium constant is satisfied, and all the reaction equilibria coexist compatibly in the system. only by adding the relationship can the equilibrium theory for the complex system be complete. this paper also tells its position in chemical thermodynamics. such a compatibility concept directly leads to an equivalence principle: in a complex system, a certain species can usually be simultaneously formed by many chemical reactions; when the system has reached equilibrium under fixed environmental conditions, the equilibrium quantity of said species calculated according to each chemical equation of these reactions will be equal and the various reaction approaches will be equivalent, provided that for all the reactants and all the other products of these reactions their equilibrium quantities in the system are respectively taken as corresponding knowns for the calculations, which is extremely useful for seeking a functional relation among the species' equilibrium quantities in a system (si contamination is one of the examples). under the guidance of those arguments, the various schools' algorithms for the si contamination can be uniformized and simplified, and the contamination quantity relation between si and o, two very important impurities, is found.
WOS关键词	GAAS ; GROWTH
WOS研究方向	Chemistry
WOS类目	Chemistry, Physical
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000073779500022
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428586
专题	半导体研究所
通讯作者	Yang, R
作者单位	Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Yang, R. Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors[J]. Journal of physical chemistry b,1998,102(20):3986-3992.
APA	Yang, R.(1998).Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors.Journal of physical chemistry b,102(20),3986-3992.
MLA	Yang, R."Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors".Journal of physical chemistry b 102.20(1998):3986-3992.

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