Transverse-mode control of vertical-cavity surface-emitting lasers | |
Zhao, YG; McInerney, JG | |
刊名 | Ieee journal of quantum electronics |
1996-11-01 | |
卷号 | 32期号:11页码:1950-1958 |
ISSN号 | 0018-9197 |
通讯作者 | Zhao, yg() |
英文摘要 | Transverse-mode control of vertical-cavity surface-emitting lasers (vcsel's) has been investigated. a theoretical model takes into account the distributions of carriers, optical field, and temperature. using a method of finding self-consistent solutions for the carrier diffusion, optical field, and thermal conduction equations, we have studied the influence of current spreading, injected current density, gain-guided aperture, and window diameter on the transverse modes. the calculated results agree well with those of experiments and show that the transverse-mode evolution of vcsel's depends on the changes of gain and refractive index induced by carriers and heating; decreasing temperature rise and profile width, current spreading, and gain-guided aperture dimension, increasing homogeneity of the injected carriers at the lasing region, and decreasing window diameter are effective methods to suppress high-order transverse modes. |
WOS关键词 | SEMICONDUCTOR-LASERS ; DIODES ; OUTPUT ; BEAM |
WOS研究方向 | Engineering ; Optics ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
语种 | 英语 |
出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
WOS记录号 | WOS:A1996VP67500012 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428486 |
专题 | 半导体研究所 |
通讯作者 | Zhao, YG |
作者单位 | NATL LAB SUPERLATTICES & MICROSTRUCT,BEIJING 100083,PEOPLES R CHINA |
推荐引用方式 GB/T 7714 | Zhao, YG,McInerney, JG. Transverse-mode control of vertical-cavity surface-emitting lasers[J]. Ieee journal of quantum electronics,1996,32(11):1950-1958. |
APA | Zhao, YG,&McInerney, JG.(1996).Transverse-mode control of vertical-cavity surface-emitting lasers.Ieee journal of quantum electronics,32(11),1950-1958. |
MLA | Zhao, YG,et al."Transverse-mode control of vertical-cavity surface-emitting lasers".Ieee journal of quantum electronics 32.11(1996):1950-1958. |
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