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	High-reflectivity aln/gan distributed bragg reflectors grown on sapphire substrates by mocvd
	Wu, C. M.1; Zhang, B. P.1,2,3; Shang, J. Z.4; Cai, L. E.1; Zhang, J. Y.1,3; Yu, J. Z.1,3; Wang, Q. M.1,3
刊名	Semiconductor science and technology
	2011-05-11
卷号	26期号:5页码:5
ISSN号	0268-1242
DOI	10.1088/0268-1242/26/5/055013
通讯作者	Wu, c. m.()
英文摘要	High-reflectivity aln/gan distributed bragg reflectors (dbrs) were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (mocvd). a low temperature (lt) predeposition aln layer and indium doping during the growth of the lambda/4 aln layers were adopted to improve the quality of the dbr. during the growth of the dbr, the structural alternation occurred abruptly when an aln layer was grown on a gan layer but gradually in reverse order, which resulted in a stack of quasi-three-layer periodic arrangement rather than two-layer arrangement for one growth period. the peak reflectivity of dbrs reaches 99% at the designed wavelength. the root mean square (rms) roughness of the surface is around 4 nm over a 10 mu m x 10 mu m surface area of the dbr. meanwhile, the high-reflectivity (93%) and crack-free dbr with only 16-period aln/gan structures was obtained by employing an optimized aln predeposition layer.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; MOLECULAR-BEAM EPITAXY ; PHASE EPITAXY ; MIRRORS ; GAN ; WAVELENGTHS
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000288696900013
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428428
专题	半导体研究所
通讯作者	Wu, C. M.
作者单位	1.Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China 2.Xiamen Univ, Pen Tung Sah Micro Nano Technol Res Ctr, Xiamen 361005, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 4.Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
推荐引用方式 GB/T 7714	Wu, C. M.,Zhang, B. P.,Shang, J. Z.,et al. High-reflectivity aln/gan distributed bragg reflectors grown on sapphire substrates by mocvd[J]. Semiconductor science and technology,2011,26(5):5.
APA	Wu, C. M..,Zhang, B. P..,Shang, J. Z..,Cai, L. E..,Zhang, J. Y..,...&Wang, Q. M..(2011).High-reflectivity aln/gan distributed bragg reflectors grown on sapphire substrates by mocvd.Semiconductor science and technology,26(5),5.
MLA	Wu, C. M.,et al."High-reflectivity aln/gan distributed bragg reflectors grown on sapphire substrates by mocvd".Semiconductor science and technology 26.5(2011):5.

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