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	The effect of different oriented sapphire substrates on the growth of polar and non-polar znmgo by mocvd
	Shi, K.; Yang, A. L.; Wang, J.; Song, H. P.; Xu, X. Q.; Sang, L.; Wei, H. Y.; Yang, S. Y.; Liu, X. L.; Zhu, Q. S.
刊名	Journal of crystal growth
	2011
卷号	314期号:1页码:39-42
关键词	Metal organic chemical vapor deposition Sapphire Zinc compounds Semiconducting ii-vi materials
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2010.11.095
通讯作者	Shi, k.(shikai@semi.ac.cn)
英文摘要	Polar and non-polar znmgo were synthesized on different crystallographic planes (c-, r- and m-planes) of sapphire (al(2)o(3)) substrates by metal organic chemical vapor deposition, respectively. under the same experimental condition, polar znmgo nanorods were obtained on c-al(2)o(3) substrate whereas non-polar znmgo thin films were obtained on r- and m-al(2)o(3) substrates. the surface morphology was significantly influenced by the competition of the preferable growth directions on different sapphire substrates. on c-al(2)o(3) substrate, znmgo nanorods were vertically well-aligned with typical lengths in the range 330-360 nm. on r- and m-al(2)o(3) substrates, however, znmgo thin films with flat surfaces were obtained, whose thickness were 150 and 20 nm, respectively. under the same condition, the c-znmgo deposited on c-al(2)o(3) substrate has the maximum growth velocity (11 nm/nim), followed by a-znmgo deposited on r-al(2)o(3) substrate (5 nm/min), and the m-znmgo deposited on m-al(2)o(3) substrate has the minimum one (0.67 nm/min). the near-band-edge (nbe) emission in photoluminescence (pl) spectra shows a clear blueshift and a slight broadening compared with that of pure zno samples, which suggest that the mg content has successfully incorporated into zno. the different energy blueshifts (67 mev and 98 mev) of the nbe emission demonstrate that a-znmgo deposited on r-al(2)o(3) substrate has higher mg incorporation efficiency than c-znmgo on c-al(2)o(3) substrate. (c) 2010 elsevier b.v. all rights reserved.
WOS关键词	VAPOR-PHASE EPITAXY ; OPTICAL-PROPERTIES ; ZNO NANORODS ; RAMAN-SCATTERING ; M-PLANE ; FILMS ; PHOTOLUMINESCENCE ; DEPOSITION ; NANOWIRES ; FIELDS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000286853400008
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428409
专题	半导体研究所
通讯作者	Shi, K.
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Shi, K.,Yang, A. L.,Wang, J.,et al. The effect of different oriented sapphire substrates on the growth of polar and non-polar znmgo by mocvd[J]. Journal of crystal growth,2011,314(1):39-42.
APA	Shi, K..,Yang, A. L..,Wang, J..,Song, H. P..,Xu, X. Q..,...&Wang, Z. G..(2011).The effect of different oriented sapphire substrates on the growth of polar and non-polar znmgo by mocvd.Journal of crystal growth,314(1),39-42.
MLA	Shi, K.,et al."The effect of different oriented sapphire substrates on the growth of polar and non-polar znmgo by mocvd".Journal of crystal growth 314.1(2011):39-42.

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