Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates | |
Su, Shaojian; Wang, Wei; Cheng, Buwen; Zhang, Guangze; Hu, Weixuan; Xue, Chunlai; Zuo, Yuhua; Wang, Qiming | |
刊名 | Journal of crystal growth
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2011-02-15 | |
卷号 | 317期号:1页码:43-46 |
关键词 | Thermal stability Molecular beam epitaxy Germanium tin alloys Germanium |
ISSN号 | 0022-0248 |
DOI | 10.1016/j.jcrysgro.2011.01.015 |
通讯作者 | Cheng, buwen(cbw@semi.ac.cn) |
英文摘要 | Single-crystal ge(1-x)sn(x) alloys (x=0.025, 0.052, and 0.078) with diamond cubic structure have been grown on si(0 0 1) substrates by molecular beam epitaxy (mbe), using high-quality ge thin films as buffer layers. the ge(1-x)sn(x) alloys are nearly fully strained and have high crystalline quality without sn surface segregation, revealed by the measurements of high resolution x-ray diffraction (hrxrd). rutherford backscattering spectra (rbs), and transmission electron microscopy (tem). in addition, thermal stability investigations show that the alloy with sn composition of about 2.5% can be stable at 500 degrees c, which may enable it for device applications. (c) 2011 elsevier b.v. all rights reserved. |
WOS关键词 | MOLECULAR-BEAM EPITAXY ; LOW-TEMPERATURE ; SEMICONDUCTORS ; GE(001)2X1 |
WOS研究方向 | Crystallography ; Materials Science ; Physics |
WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE BV |
WOS记录号 | WOS:000288837700009 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428319 |
专题 | 半导体研究所 |
通讯作者 | Cheng, Buwen |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Su, Shaojian,Wang, Wei,Cheng, Buwen,et al. Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates[J]. Journal of crystal growth,2011,317(1):43-46. |
APA | Su, Shaojian.,Wang, Wei.,Cheng, Buwen.,Zhang, Guangze.,Hu, Weixuan.,...&Wang, Qiming.(2011).Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates.Journal of crystal growth,317(1),43-46. |
MLA | Su, Shaojian,et al."Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates".Journal of crystal growth 317.1(2011):43-46. |
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