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Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates
Su, Shaojian; Wang, Wei; Cheng, Buwen; Zhang, Guangze; Hu, Weixuan; Xue, Chunlai; Zuo, Yuhua; Wang, Qiming
刊名Journal of crystal growth
2011-02-15
卷号317期号:1页码:43-46
关键词Thermal stability Molecular beam epitaxy Germanium tin alloys Germanium
ISSN号0022-0248
DOI10.1016/j.jcrysgro.2011.01.015
通讯作者Cheng, buwen(cbw@semi.ac.cn)
英文摘要Single-crystal ge(1-x)sn(x) alloys (x=0.025, 0.052, and 0.078) with diamond cubic structure have been grown on si(0 0 1) substrates by molecular beam epitaxy (mbe), using high-quality ge thin films as buffer layers. the ge(1-x)sn(x) alloys are nearly fully strained and have high crystalline quality without sn surface segregation, revealed by the measurements of high resolution x-ray diffraction (hrxrd). rutherford backscattering spectra (rbs), and transmission electron microscopy (tem). in addition, thermal stability investigations show that the alloy with sn composition of about 2.5% can be stable at 500 degrees c, which may enable it for device applications. (c) 2011 elsevier b.v. all rights reserved.
WOS关键词MOLECULAR-BEAM EPITAXY ; LOW-TEMPERATURE ; SEMICONDUCTORS ; GE(001)2X1
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
出版者ELSEVIER SCIENCE BV
WOS记录号WOS:000288837700009
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2428319
专题半导体研究所
通讯作者Cheng, Buwen
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Su, Shaojian,Wang, Wei,Cheng, Buwen,et al. Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates[J]. Journal of crystal growth,2011,317(1):43-46.
APA Su, Shaojian.,Wang, Wei.,Cheng, Buwen.,Zhang, Guangze.,Hu, Weixuan.,...&Wang, Qiming.(2011).Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates.Journal of crystal growth,317(1),43-46.
MLA Su, Shaojian,et al."Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates".Journal of crystal growth 317.1(2011):43-46.
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