| Determination of the transport properties in 4h-sic wafers by raman scattering measurement | |
| Sun Guo-Sheng1,2,3; Liu Xing-Fang2; Wu Hai-Lei2; Yan Guo-Guo2; Dong Lin2; Zheng Liu2; Zhao Wan-Shun2; Wang Lei2; Zeng Yi-Ping1,2; Li Xi-Guang3 | |
| 刊名 | Chinese physics b
 |
| 2011-03-01 | |
| 卷号 | 20期号:3页码:6 |
| 关键词 | 4h-sic Raman scattering Lopc modes Transport properties |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/20/3/033301 |
| 通讯作者 | Sun guo-sheng(gshsun@red.semi.ac.cn) |
| 英文摘要 | The free carrier density and mobility in n-type 4h-sic substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon plasmon coupled (lopc) modes, and compared with those determined by hall-effect measurement and that provided by the vendors. the transport properties of thick and thin 4h-sic epilayers grown in both vertical and horizontal reactors were also studied. the free carrier density ranges between 2 x 10(18) cm(-3) and 8x10(18) cm(-3) with a carrier mobility of 30-55 cm(2)/(v.s) for n-type 4h-sic substrates and 1 x 10(16) -3 x 10(16) cm(-3) with mobility of 290-490 cm(2)/(v.s) for both thick and thin 4h-sic epilayers grown in a horizontal reactor, while thick 4h-sic epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1 x 10(16) cm(-3) with mobility of 380 cm(2)/(v.s). it was shown that raman spectroscopy is a potential technique for determining the transport properties of 4h-sic wafers with the advantage of being able to probe very small volumes and also being non-destructive. this is especially useful for future mass production of 4h-sic epi-wafers. |
| WOS关键词 | SILICON-CARBIDE ; LIGHT ; GAP |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000289939700027 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2428140 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun Guo-Sheng |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Dongguan Tianyu Semicond Inc, Dongguan 523000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun Guo-Sheng,Liu Xing-Fang,Wu Hai-Lei,et al. Determination of the transport properties in 4h-sic wafers by raman scattering measurement[J]. Chinese physics b,2011,20(3):6. |
| APA | Sun Guo-Sheng.,Liu Xing-Fang.,Wu Hai-Lei.,Yan Guo-Guo.,Dong Lin.,...&Wang Zhan-Guo.(2011).Determination of the transport properties in 4h-sic wafers by raman scattering measurement.Chinese physics b,20(3),6. |
| MLA | Sun Guo-Sheng,et al."Determination of the transport properties in 4h-sic wafers by raman scattering measurement".Chinese physics b 20.3(2011):6. |
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